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Search Publications by: James G. Kushmerick (Fed)

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Displaying 1 - 15 of 15

Influence of substrate on crystallization in polythiophene/fullerene blends

January 13, 2011
Lee J. Richter, Christine He, David Germack, R Joseph Kline, Dean DeLongchamp, Daniel A. Fischer, Chad R. Snyder, James G. Kushmerick
The nanoscale morphology of the active layer in organic, bulk heterojunction (BHJ) solar cells is crucial to device performance. Often a combination of casting conditions and post deposition thermal treatment are used to optimize the morphology. In general

Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors

December 2, 2008
Lucile C. Teague, Behrang H. Hamadani, John E. Anthony, David J. Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A. Richter, Oana Jurchescu
We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device

Nanoscale Switch Elements From Self-Assembled Monolayers on Silver

October 16, 2008
J M. Beebe, James G. Kushmerick
Au/molecule/Ag junctions are shown to behave as voltage-controlled two-state switches. In the open state, the current-voltage behavior is consistent with a metal-molecule-metal tunnel junction. At a negative bias threshold, silver filaments bridge the gap

Origin of Discrepancies in Inelastic Electron Tunneling Spectra ofMolecular Junctions

October 16, 2008
Lam H. Yu, Christopher D. Zangmeister, James G. Kushmerick
We report inelastic electron tunneling spectroscopy (IETS) of multilayer molecular junctions with and without incorporated metal nano-particles. The incorporation of metal nanoparticles into our devices leads to enhanced IET intensity and a modified line

Molecule induced interface states dominate charge transport in Si-alkyl-metal junctions

August 26, 2008
Lam H. Yu, Nadine E. Gergel-Hackett, Christopher D. Zangmeister, Christina A. Hacker, Curt A. Richter, James G. Kushmerick
Abstract. Semiconductor-molecule-metal junctions consisting of alkanethiol mono- layers self-assembled on both p+ and n¡ type highly doped Si(111)wires contacted with a 10 ¹m Au wire in a crossed-wire geometry are examined. Low temperature transport

Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs

February 17, 2008
David J. Gundlach, James Royer, Behrang Hamadani, Lucile C. Teague, Andrew J. Moad, Oana Jurchescu, Oleg A. Kirillov, Lee J. Richter, James G. Kushmerick, Curt A. Richter, Sungkyu Park, Thomas Jackson, Sankar Subramanian, John E. Anthony
Organic electronics present a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. However, the lack of low-temperature low-cost deposition and patterning techniques limits the potential for the

Tracing Electronic Pathways in Molecules Using Inelastic Tunneling Spectroscopy

September 4, 2007
Alessandro Troisi, J M. Beebe, Laura B. Picraux, Roger D. van Zee, D R. Stewart, M Ratner, James G. Kushmerick
Using inelastic electron tunneling spectroscopy (IETS) to measure the vibronic structure of non-equilibrium molecular transport, aided by a quantitative interpretation scheme based on non-equilibrium Greens function/density functional theory methods, we

Single-Molecule Charge Transport Measurements Reveal Technique-Dependant Perturbations

August 8, 2006
Dwight S. Seferos, A S. Blum, James G. Kushmerick, Guillermo Bazan
We compare scanning tunneling microscopy (STM) imaging with single molecule conductive atomic force microscopy (C-AFM) measurements by probing a series of structurally-related thiol-terminated oligo(phenylenevinylene)s (OPVs) designed to have unique charge

Transition From Direct Tunneling to Field Emission in Metal-Molecule-Metal Junctions

July 1, 2006
J M. Beebe, BongSoo Kim, John William Gadzuk, C D. Frisbie, James G. Kushmerick
Current-voltage measurements of metal-molecule-metal tunnel junctions formed from p-conjugated thiols exhibit an inflection point on a plot of ln(I/V2) against 1/V, consistent with a transition in tunneling barrier shape from trapezoidal to triangular. The