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Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors

Published

Author(s)

Lucile C. Teague, Behrang H. Hamadani, John E. Anthony, David J. Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A. Richter, Oana Jurchescu

Abstract

We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device performance. In these devices charge transport is limited by the structure and interaction of the diF-TESADT grains within the active portion of the device rather than by the electrical contacts between the organic semiconductor and the source and drain electrodes.
Citation
Advanced Materials
Volume
20

Keywords

"molecular electronics", "nanotechnology"

Citation

Teague, L. , Hamadani, B. , Anthony, J. , Gundlach, D. , Kushmerick, J. , Subramanian, S. , Jackson, T. , Richter, C. and Jurchescu, O. (2008), Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors, Advanced Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=831446 (Accessed September 27, 2021)
Created December 2, 2008, Updated February 19, 2017