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Search Publications by: Tam Duong (Fed)

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Displaying 26 - 34 of 34

Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module

February 24, 2008
Author(s)
Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr., Jose M. Ortiz
This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switches

High-Voltage, High-Frequency SiC Power MOSFETs Model Validation

June 21, 2007
Author(s)
Jose M. Ortiz, Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr.
Simulated results for techniques used to validate the on-state, resistive load switching, inductive load switching, and high voltage depletion capacitance performance for 4H-SiC power MOSFETs are presented. The validation is performed using a script

Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

February 25, 2007
Author(s)
Tam H. Duong, David Berning, Allen R. Hefner Jr., Keyue M. Smedley
This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single

Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

October 1, 2006
Author(s)
Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power