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Search Publications by: Albert Davydov (Fed)

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Displaying 1 - 25 of 170

Isotopic effects on in-plane hyperbolic phonon polaritons in MoO3

March 4, 2024
Author(s)
Jeremy Schultz, Sergiy Krylyuk, Jeffrey Schwartz, Albert Davydov, Andrea Centrone
Hyperbolic phonon polaritons (HPhPs), hybrids of light and lattice vibrations in polar dielectric crystals, empower nano-photonic applications by enabling the confinement and manipulation of light at the nanoscale. Molybdenum trioxide (α-MoO3) is a

INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMSTM 2023 EDITION METROLOGY

December 8, 2023
Author(s)
Elisabeth Mansfield, Bryan Barnes, R Joseph Kline, Andras E. Vladar, Yaw S. Obeng, Albert Davydov
The Metrology Chapter identifies emerging measurement challenges from devices, systems, and integration of new materials in the semiconductor industry and describes research and development pathways for meeting them. This includes but not limited to

Single-Phase L10-Ordered High Entropy Thin Films with High Magnetic Anisotropy

November 11, 2023
Author(s)
Willie Beeson, Dinesh Bista, Huairuo Zhang, Sergiy Krylyuk, Albert Davydov, Gen Yin, Kai Liu
The vast high entropy alloy (HEA) composition space is promising for discovery of new material phases with unique properties. We explore the potential to achieve high magnetic anisotropy materials in single-phase HEA thin films. Thin films of FeCoNiMnCu

Emergent ferromagnetism with superconductivity in Fe(Te,Se) van der Waals Josephson junctions

October 23, 2023
Author(s)
Gang Qiu, Hung-Yu Hu, Lunhui Hu, Huairuo Zhang, Chi-Yen Chen, Yanfeng Lyu, Christopher Eckberg, Peng Deng, Sergiy Krylyuk, Albert Davydov, Ruixing Zhang, Kang Wang
Ferromagnetism and superconductivity are two key ingredients for topological superconductors, which can serve as building blocks of fault-tolerant quantum computers. Adversely, ferromagnetism and superconductivity are typically also two hostile orderings

Strain-activated stimulated emission from multilayer MoSe2 in a narrow operation window

September 24, 2023
Author(s)
Yuankun Lin, Noah Hurley, Steve Kamau, Evan Hathaway, Yan Jiang, Roberto Gonzalez Rodriguez, Sinto Varghese, Sergiy Krylyuk, Albert Davydov, Yuanxi Wang, Anupama Kaul, Jingbiao Cui
Herein, photoluminescence (PL) and fluorescence lifetime imaging (FLIM) in multilayer MoSe2 are studied. Strain-activated stimulated emission via defect levels in multilayer MoSe2 under laser excitation is observed, for the first time in defects of

Electrostatic modulation of thermoelectric transport properties of 2H-MoTe2

September 6, 2023
Author(s)
Tianhui Zhu, Sree Sourav Das, Safoura Nayebsadeghi, Fajana Tonni, Sergiy Krylyuk, Costel Constantin, Keivan Esfarjani, Albert Davydov, Mona Zebarjadi
Two-dimensional layered transition metal dichalcogenides are potential thermoelectric candidates with application in on-chip integrated nanoscale cooling and power generation. Here, we report a comprehensive experimental and theoretical study on the in

Mid-Infrared, Near-Infrared, and Visible Nanospectroscopy of Hydrogen-Intercalated MoO3

August 21, 2023
Author(s)
Jeffrey Schwartz, Sergiy Krylyuk, Devon Jakob, Albert Davydov, Andrea Centrone
Control over the local chemical composition and spatial heterogeneities in nanomaterials provides a means to impart new functions and to tailor their properties in many applications. For two-dimensional (2D) van der Waals materials, intercalation is one

The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity

June 8, 2023
Author(s)
Peter Litwin, Samantha Jaszewski, Wendy Sarney, Asher Leff, Sergiy Krylyuk, Albert Davydov, Jon Ihlefeld, Stephen McDonnell
We report on the synthesis of self-intercalated Nb1+xSe2 thin films by molecular beam epitaxy. Nb1+xSe2 is a metal-rich phase of NbSe2 where additional Nb atoms populate the van der Waals gap. The grown thin films are studied as a function of the Se to Nb

Rydberg Excitons and Trions in Monolayer MoTe2

April 12, 2023
Author(s)
Souvik Biswas, Aurelie Champagne, Jonah Haber, supavit pokawanvit, Joeson Wong, Hamidreza Akbari, Sergiy Krylyuk, Kenji Watanabe, Albert Davydov, Zakaria Al Balushi, Felipe H. da Jornada, Diana Qiu, Jeffrey Neaton, Harry Atwater
Monolayer transition metal dichalcogenide (TMDC) semiconductors exhibit strong excitonic optical resonances which serve as a microscopic, non-invasive probe into their fundamental properties. Like the hydrogen atom, such excitons can exhibit an entire

Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements

February 27, 2023
Author(s)
Zhihui Cheng, Curt A. Richter, Hattan Abuzaid, Jonathan Backman, Mathieu Luisier, Huairuo Zhang, Albert Davydov, Guoqing Li, Yifei Yu, Linyou Cao, Aaron Franklin
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomic thin nature which withstands short channel effects and thus enables better scalability. Since improved scalability is the core advantage, both the channel

Phase-transition-induced Thermal Hysteresis in Type-II Weyl Semimetals MoTe2 and Mo(1-x)W(x)Te2

November 19, 2022
Author(s)
Md Sabbir Akhanda, Sergiy Krylyuk, Diane Dickie, Albert Davydov, Fei Han, Mingda Li, Mona Zebarjadi
The resistivity versus temperature measurement is commonly used for identifying temperature-induced phase change and the resulting hysteresis loop. While the resistance is influenced by both the density of states and the carrier lifetimes, the Seebeck

Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon

October 27, 2022
Author(s)
Jinshui Miao, Chloe Leblanc, Jinjin Wang, Yue Gu, Xiwen Liu, Baokun Song, Huairuo Zhang, Sergiy Krylyuk, Weida Hu, Albert Davydov, Tyson Back, Nicholas Glavin, Deep Jariwala
Low power consumption in the static and dynamic modes of operation is a key requirement in the development of modern electronics. Tunnel field-effect transistors with direct band-to-band charge tunnelling and steep-subthreshold-slope transfer

Transport Properties of Few-Layer NbSe2: from Electronic Structure to Thermoelectric Properties

July 20, 2022
Author(s)
Tianhui Zhu, Peter Litwin, Md Golam Rosul, Devin Jessup, Md Sabbir Akhanda, Farjana Tonni, Sergiy Krylyuk, Albert Davydov, Petra Reinke, Stephen McDonnell, Mona Zebarjadi
4-layer NbSe2 is grown on SiO2 by molecular beam epitaxy. The in-situ X-ray photoelectron spectroscopy (XPS) measurements suggest a Nb-rich stoichiometry (Nb1+xSe2) likely due to intercalation of Nb atoms in between the NbSe2 layers. The metallic nature of

Rapid Phase Transition of Al2O3 Encapsulated MoTe2 via Thermal Annealing

July 19, 2022
Author(s)
Rohan Sengupta, Saroj Dangi, Sergiy Krylyuk, Albert Davydov, Spyridon Pavlidis
MoTe2 has gained a lot of attention recently as a potential phase change material candidate for low-power nonvolatile switches and high-density memory applications, due to the smallest predicted energy offset between its semiconducting 2H and semimetallic

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

June 30, 2022
Author(s)
Chandraman Patil, Chaobo Dong, Hao Wang, Hamed Dalir, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Volker Sorger
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

April 29, 2022
Author(s)
Norman A. Sanford, Paul T. Blanchard, Alexana Roshko, Ashwin Rishinaramangalam, Daniel Feezell, Albert Davydov
Laser-assisted atom probe tomography (L-APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/InxGa1-xN/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four separate sample types

Are 2D Interfaces Really Flat?

March 15, 2022
Author(s)
Zhihui Cheng, Huairuo Zhang, Son Le, Hattan Abuzaid, Guoqing Li, Yifei Yu, Albert Davydov, Linyou Cao, Aaron Franklin, Curt A. Richter
Two-dimensional (2D) materials are amenable to external mechanical deformation and thus forming bubbles and wrinkles. However, little is known about the dynamics of 2D interfaces, especially their flatness under different conditions. Here we use cross

Electrochemically Assaying Dopamine with p-Doped Silicon Nanowires

March 14, 2022
Author(s)
Nawaraj Karki, Albert Davydov, Sergiy Krylyuk, Charles Chusuei
Neuroblastoma, a pediatric cancer, is characterized by high urinary excretion of dopamine (DA). Silicon nanowires (SiNWs), which are nontoxic and known to resist surface fouling in biological samples, were investigated for practical use as working

Spatially-resolved bandgap and dielectric function in two-dimensional materials from Electron Energy Loss Spectroscopy

February 15, 2022
Author(s)
Abel Brokkelkamp, Jaco ter Hoeve, Isabel Postmes, Sabrya van Heijst, Luigi Maduro, Albert Davydov, Sergiy Krylyuk, Juan Rojo, Sonia Conesa Boj
The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Author(s)
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)