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Search Publications by Albert Davydov

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Displaying 1 - 25 of 137

The joint automated repository for various integrated simulations (JARVIS) for data-driven materials design

Author(s)
Kamal Choudhary, Kevin F. Garrity, Andrew C. Reid, Brian DeCost, Adam J. Biacchi, Angela Hight Walker, Zachary Trautt, Jason Hattrick-Simpers, Aaron G. Kusne, Andrea Centrone, Albert Davydov, Francesca Tavazza, Jie Jiang, Ruth Pachter, Gowoon Cheon, Evan Reed, Ankit Agrawal, Xiaofeng Qian, Vinit Sharma, Houlong Zhuang, Sergei Kalinin, Ghanshyam Pilania, Pinar Acar, Subhasish Mandal, David Vanderbilt, Karin Rabe
The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using

Localized Excitons in NbSe2-MoSe2 Heterostructures

Author(s)
Jaydeep Joshi, Tong Zhou, Sergiy Krylyuk, Albert Davydov, Igor Zutic, Patrick M. Vora
Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient

Photocurrent detection of the orbital angular momentum of light

Author(s)
Zhurun Ji, Wenjing Liu, Sergiy Krylyuk, Xiaopeng Fan, Zhifeng Zhang, Anlian Pan, Liang Feng, Albert Davydov, Ritesh Agarwal
Utilizing the orbital angular momentum (OAM) of light is promising for increasing the bandwidth of optical communication networks. However, direct photocurrent

Comparable Enhancement of TERS signals from WeSe2 on Chromium and Gold.

Author(s)
Albert Davydov, Sergiy Krylyuk, Angela R. Hight Walker, Bojan R. Ilic, Andrey Krayev, Ashish Bhattarai, Alan G. Joly, Matej Velicky, Patrick Z. El-Khoury
Plasmonic tip-sample junctions, at which the incident and scattered optical fields are localized and optimally enhanced, are often exploited to achieve

Doping of MoTe2 via surface charge-transfer in ambient air

Author(s)
Gheorghe Stan, Cristian Ciobanu, Sri Ranga Jai Likith, Asha Rani, Sergiy Krylyuk, Albert Davydov
Doping is a key process that facilitates the use of semiconductors for electronic and optoelectronic devices, by which the concentration and type of majority

Valley Phenomena in the Candidate Phase Change Material WSe2(1-x)Te2x

Author(s)
Sean M. Oliver, Joshua Young, Sergiy Krylyuk, Thomas L. Reinecke, Albert Davydov, Patrick M. Vora
Alloyed transition metals dichalcogenides (TMDs) provide the unique opportunity for coupling band engineering and valleytronic phenomena in an atomically-thin

Dielectric properties of Nb_x}W_1-x}Se_2} alloys

Author(s)
Albert Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela Hight Walker, Albert Davydov, David Newell
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties

Thermal Stability of Titanium Contacts to MoS2

Author(s)
Huairuo Zhang, Albert Davydov, Leonid A. Bendersky, Keren M. Freedy, Stephen J. McDonnell
Thermal annealing of Ti contacts is commonly implemented in the fabrication of MoS2 devices however its effects on interface chemistry have not been previously

An Ultra-fast Multi-level MoTe2-based RRAM

Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to

Black phosphorus tunneling field-effect transistors

Author(s)
Albert Davydov, Huairuo Zhang, Leonid A. Bendersky
Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect

Predicting synthesizability

Author(s)
Albert Davydov, Ursula R. Kattner
Advancements in multiscale multi-physics computational materials design have led to accelerated discovery of advanced materials for energy, electronics and

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi