Metrology for 2D materials: a perspective review from the international roadmap for devices and systems

Published

April 8, 2024

Author(s)

Albert Davydov, Yaw S. Obeng, Ndubuisi George Orji, Umberto Celano, Daniel Schmidt, Carlos Beitia

Abstract

The international roadmap of devices and systems (IRDS) projects that 2D materials will be inserted into high-volume manufacturing as channel materials, mostly for low-power applications within the next ten years. While their broader introduction in the advanced chip manufacturing environment is still limited, it is obvious that a multitude of characterization methods is required to access their structural, electrical, compositional, and mechanical properties, and for monitoring and tuning of their properties in mass-produced devices. This lab-to-fab transition is still in the early stage, and we note that although a one-size-fits-all metrology solution does not exist yet, rapid progress has been made by the community in a relatively short timeframe, thus indicating exciting times ahead. In this paper, we review existing measurement capabilities and gaps in key areas of dedicated metrology for CMOS-compatible 2D materials and describe the fundamental measurement science limits associated with these techniques when applied to 2D materials for high-volume semiconductor manufacturing environment.

Citation

Nanoscale Advances

Pub Type

Journals

Download Paper

https://doi.org/10.1039/D3NA01148H

Local Download

Keywords

2D materials, roadmap, microelectronics, transition metal dichalcogenides (TMD), metrology

Citation

Davydov, A. , Obeng, Y. , Orji, N. , Celano, U. , Schmidt, D. and Beitia, C. (2024), Metrology for 2D materials: a perspective review from the international roadmap for devices and systems, Nanoscale Advances, [online], https://doi.org/10.1039/D3NA01148H, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956896 (Accessed April 29, 2024)