The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity

Published

June 8, 2023

Author(s)

Peter Litwin, Samantha Jaszewski, Wendy Sarney, Asher Leff, Sergiy Krylyuk, Albert Davydov, Jon Ihlefeld, Stephen McDonnell

Abstract

We report on the synthesis of self-intercalated Nb1+xSe2 thin films by molecular beam epitaxy. Nb1+xSe2 is a metal-rich phase of NbSe2 where additional Nb atoms populate the van der Waals gap. The grown thin films are studied as a function of the Se to Nb flux ratio. X-ray photoelectron spectroscopy and X-ray diffraction indicate that flux ratios of 5:1 and greater result in the growth of the Nb1+xSe2 phase and that the amount of intercalation is inversely proportional to the Se to Nb flux ratio. Electrical resistivity measurements also show an inverse relationship between flux ratio and resistivity in the grown Nb1+xSe2 thin films. Another Nb-Se compound with an approximately 1:1 stoichiometry was synthesized using a Se to Nb flux ratio of 2:1; in contrast to the Nb1+xSe2 thin films, this compound did not show evidence of a layered structure.

Citation

Journal of Vacuum Science and Technology A

Volume

41

Pub Type

Journals

Download Paper

https://doi.org/10.1116/6.0002593

Local Download

Keywords

MBE, NbSe2, self-intercalation

Citation

Litwin, P. , Jaszewski, S. , Sarney, W. , Leff, A. , Krylyuk, S. , Davydov, A. , Ihlefeld, J. and McDonnell, S. (2023), The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity, Journal of Vacuum Science and Technology A, [online], https://doi.org/10.1116/6.0002593, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936534 (Accessed December 11, 2024)