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Search Publications by: Joseph A Stroscio (Fed)

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Displaying 76 - 88 of 88

A Scanning Tunneling Microscopy Study of Clean and Cs-Covered InSb(110)

January 1, 1991
Author(s)
L Whitman, Joseph A. Stroscio, Robert A. Dragoset, Robert Celotta
AB Scanning tunneling microscopy has been employed to study clean and Cs-covered InSb(110) surfaces. Atomic-resolution images of both the filled and empty electronic state densities have been obtained. The surface relaxation determined from these images is

A System for the Study of Magnetic Materials and Magnetic Imaging with the STM

January 1, 1991
Author(s)
P First, Joseph A. Stroscio, Daniel T. Pierce, Robert A. Dragoset, Robert Celotta
A report of work in progress to determine the feasibility of imaging the magnetization of ferromagnetic samples with the scanning tunneling microscope (STM) is presented. A vacuum system was designed to test several different proposals as well as to

Atomic and Molecular Manipulation With the Scanning Tunneling Microscope

January 1, 1991
Author(s)
Joseph A. Stroscio, D Eigler
The prospect of manipulating matter on the atomic scale has fascinated scientists for decades. This fascination may be motivated by scientific and technological opportunities, or from a curiosity about the consequences of being able to place atoms in a

Insulating Cs Overlayer on InSb(110)

January 1, 1991
Author(s)
L Whitman, Joseph A. Stroscio, Robert A. Dragoset, Robert Celotta
Cesium overlayers on room-temperature InSb(110) have been studied with scanning tunneling microscopy and spectroscopy. A two-dimensional (2D) overlayer is observed, consisting of four-atom, Cs(110)-like planar clusters arranged in a c(2 x 6) superlattice

Dispersion of Evanescent Band Gap States in Fe Clusters on GaAs(110)

January 1, 1990
Author(s)
Joseph A. Stroscio, P First, Robert A. Dragoset, L Whitman, Daniel T. Pierce, Robert Celotta
We report scanning tunneling microscopy results on the band gap states observed in tunneling to nanometer size metallic Fe clusters on GaAs(110) surfaces. In the vicinity of the Fe clusters, a continuum of gap states is found in tunneling spectra from

Scanning Tunneling Microscopy Study of InSb(110)

January 1, 1990
Author(s)
L Whitman, Joseph A. Stroscio, Robert A. Dragoset, Robert Celotta
The (110) cleavage surface of InSb has been studied with scanning tunneling microscopy. A variety of surface defects has been observed, including those that appear to be simple vacancies and Schottky defects. Atomic-resolution images have been obtained of

Characterization of Epitaxial Fe on GaAs(110) By Scanning Tunneling Microscopy

January 1, 1989
Author(s)
Robert A. Dragoset, P First, Joseph A. Stroscio, Daniel T. Pierce, Robert Celotta
Iron on GaAs(110) comprises an interesting system not only due to small lattice mismatch, 1.4%, but also because of the magnetic properties of the overlayer. In the present work, scanning tunneling microscopy (STM) was used to investigate bcc Fe films in

Metallicity and Gap States in Tunneling to Fe Clusters on GaAs(110)

January 1, 1989
Author(s)
P First, Joseph A. Stroscio, Robert A. Dragoset, Daniel T. Pierce, Robert Celotta
We report the characteristics of tunneling to a GaAs(110) substrate with distinct, nanometer-size Fe clusters, as a function of distance from and size of the clusters. We show that Fe clusters of volumes 150 Aring} 3, corresponding to =13 atoms, are

Structure of Cs on GaAs(110) as Determined by STM

January 1, 1989
Author(s)
P First, Robert A. Dragoset, Joseph A. Stroscio, Robert Celotta, R Feenstra
Submonolayer coverages of Cs adsorbed at room temperature on the GaAs(110) surface are examined with scanning tunneling microscopy. Linear chains, formed by two adjoining rows of Cs atoms, are observed along the [10] direction for coverages as low as 0.03