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Displaying 1 - 25 of 176

A Structural Study of Electrodeposited Fe on GaAs(001)

October 12, 2021
Author(s)
Erik B. Svedberg, J Mallett, Leonid A. Bendersky, A G. Roy, William F. Egelhoff Jr., Thomas P. Moffat
The microstructure of Fe films electrodeposited onto n-GaAs(001) from FeCl_(2) and FeSO_(4)-(NH_(4)-(2)SO_(4) electro;ytes was examined by x-ray and electron diffraction. Symmetrical x-ray diffraction from film deposited from chloride solutions indicates a

Characterization of New 5M and 7M Polytypes of Niobia-Doped Ca 2 Ta 2 O 7

October 12, 2021
Author(s)
I E. Grey, Robert S. Roth, W G. Mumme, J Planes, Leonid A. Bendersky, C Li, J Chenavas
Two new calcium tantalate polytypes have been prepared in the system Ca2Ta2O7-Ca2Nb2O7. Their structures have been determined and refined using single crystal X-ray diffraction data and powder neutron diffraction data, and their dielectric properties have

Magnetoelectric Nanocomposite Thin Films Designed by Composition Spreads

October 12, 2021
Author(s)
Makoto Murakami, C Gao, K S. Chang, B Hu, M A. Aronova, C L. Lin, Jason Hattrick-Simpers, S E. Lofland, L Knauss, Leonid A. Bendersky, M. Wuttig, Ichiro Takeuchi
Multiferroic materials Superscript (1,2) can exhibit magnetoelectric (ME) effects Superscript (3-5), which are of great interest for novel device applications including inexpensive ultrasensitive magnetometer approaching the sensitivity of SQUID

Orientation and Magnetic Properties of FePt and CoPt Films Grown on MgO(110) Single-Crystal Substrate by Electron-Beam Coevaporation

October 12, 2021
Author(s)
M-H Yu, Hiroyuki Ohguchi, Antonio Zambano, Ichiro Takeuchi, J P. Liu, Daniel Josell, Leonid A. Bendersky
We have studied the orientation and magnetic properties of FePt and CoPt films deposited by electron-beam co-evaporation on MgO(110) single-crystal substrates at different substrate temperatures between 500 and 700 degrees C. We observed that the long

Tunable Multiferroic Properties in Nanocomposite PbTiO3-CoFe2O4 Epitaxial Thin Films

October 12, 2021
Author(s)
Makoto Murakami, K S. Chang, M A. Aronova, C L. Lin, M-H Yu, Jason Hattrick-Simpers, M. Wuttig, Ichiro Takeuchi, C Gao, S E. Lofland, Leonid A. Bendersky
We report on the synthesis of PbTiO3-CoFe2)4 (PTO-CFO) multiferroic nanocomposite and continuous turning of their ferroic properties as a function of composition on thin-film composition spreads. Highest dielectric constant and non-linear dielectric signal

On-the-fly closed-loop materials discovery via Bayesian active learning

November 24, 2020
Author(s)
Aaron Gilad Kusne, Heshan Yu, Huairuo Zhang, Jason Hattrick-Simpers, Brian DeCost, Albert Davydov, Leonid A. Bendersky, Apurva Mehta, Ichiro Takeuchi
Active learning—the field of machine learning (ML) dedicated to optimal experiment design—has played a part in science as far back as the 18th century when Laplace used it to guide his discovery of celestial mechanics. In this work, we focus a closed-loop

Thermal Stability of Titanium Contacts to MoS2

August 30, 2019
Author(s)
Huairuo Zhang, Albert Davydov, Leonid A. Bendersky, Keren M. Freedy, Stephen J. McDonnell
Thermal annealing of Ti contacts is commonly implemented in the fabrication of MoS2 devices however its effects on interface chemistry have not been previously reported in the literature. In this work, the thermal stability of titanium contacts deposited

An Ultra-fast Multi-level MoTe2-based RRAM

January 17, 2019
Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2Hd phase transition. Different from conventional RRAM devices based on ionic migration, the

Black phosphorus tunneling field-effect transistors

December 21, 2018
Author(s)
Albert Davydov, Huairuo Zhang, Leonid A. Bendersky
Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for low-power integration circuits and have been demonstrated to overcome

Electric field induced phase transition in vertical MoTe2 and Mo1-xWxTe2 based RRAM devices

December 10, 2018
Author(s)
Feng Zhang, Sergiy Krylyuk, Huairuo Zhang, Cory A. Milligan, Dmitry Y. Zemlyanov, Leonid A. Bendersky, Albert Davydov, Joerg Appenzeller, Benjamin P. Burton, Yugi Zhu
Transition metal dichalcogenides have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature and polymorphism. Here, we report an electric-field-induced structural transition from a 2H

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

July 30, 2018
Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of