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Displaying 1876 - 1900 of 2183

Accuracy Differences Among Photomask Metrology Tools--and Why They Matter

September 1, 1998
Author(s)
James E. Potzick
A variety of different kinds of photomask critical dimension (CD) metrology tools are available today to help meet current and future metrology challenges. These tools are based on different operating principles, and have differing cost, throughput

Case Against Optical Gauge Block Metrology

September 1, 1998
Author(s)
Theodore D. Doiron, Dennis S. Everett, Bryon S. Faust, Eric S. Stanfield, John R. Stoup
The current definition of length of a gage block is a very clever attempt to evade the systematic errors associated with the wringing layer thickness and optical phase corrections. In practice, there are very large systematic operator and surface effects

Minimizing Error Sources in Gage Block Mechanical Comparison Measurements

September 1, 1998
Author(s)
Bryon S. Faust, John R. Stoup, Debra K. Stanfield
Error sources in gage block mechanical comparisons can range from classical textbook examples (thermal gradients, correct temperature value, and correct master value) to a completely counter-intuitive example of diamond probe tip wear at low applied force

Accuracy and Traceability in Dimensional Measurements

June 1, 1998
Author(s)
James E. Potzick
Dimensional measurements of importance to microlithography include feature sizes and feature placement on photomasks and wafers, overlay eccentricities, defect and particle sizes on masks and wafers, and many others. A common element is that the object

Developing a Method to Determine Linewidth Based on Counting the Atom-Spacings Across a Line

June 1, 1998
Author(s)
Richard M. Silver, Carsten P. Jensen, V W. Tsai, Joseph Fu, John S. Villarrubia, E C. Teague
We are developing the instrumentation and prototype samples at NIST to enable the counting of atom-spacings across linewidth features etched in silicon. This is an effort to allow the accurate counting of atom-spacings across a feature in a controlled

Measurement of Pitch and Width Samples with the NIST Calibrated Atomic Force Microscope

June 1, 1998
Author(s)
Ronald G. Dixson, R Koning, Theodore V. Vorburger, Joseph Fu, V W. Tsai
Because atomic force microscopes (AFMs) are capable of generating three dimensional images with nanometer level resolution, these instruments are being increasingly used in many industries as tools for dimensional metrology at sub- micrometer length scales

Toward a Unified Advanced CD-SEM Specification for Sub 0.18 Micrometer Technology

June 1, 1998
Author(s)
J Allgair, C Archie, W Banke, H Bogardus, J Griffith, H Marchman, Michael T. Postek, L Saraf, J Schlesinger, B Singh, N. Sullivan, L Trimble, Andras Vladar, A Yanof
The stringent critical dimension (CD) control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope

Summary Report of NIST/MSC Workshop on Traceability in Length

April 1, 1998
Author(s)
Dennis A. Swyt
The National Institute of Standards and Technology, in conjunction with the Measurement Science Conference, conducted an industry-needs workshop on February 4, 1998, on issues with U.S. manufacturing companies, particularly smaller ones, may have in

Analytical/Experimental Study of Vibration of a Room-Sized Airspring-Supported Slab

March 1, 1998
Author(s)
H Amick, B Sennewald, E C. Teague, Brian R. Scace
This paper reports the results of the finite element analysis and in-situ testing of a large-scale (4 m x 10 m) pneumatically isolated concrete slab are reported. The slab was constructed as a design prototype for next generation metrology laboratories at

Round Robin Determination of Power Spectral Densities of Different Si Wafer Surfaces

March 1, 1998
Author(s)
Egon Marx, I J. Malik, Y Strausser, T Bristow, N Poduje, J C. Stover
Power spectral densities (PSDs) were used to characterize a set of surfaces over a wide range of lateral as well as perpendicular dimensions. Twelve 200-mm-diameter Si wafers were prepared and the surface finishes ranged from as-ground wafers to epitaxial

Tip Characterization for Scanned Probe Microscope Width Metrology

March 1, 1998
Author(s)
Samuel Dongmo, John S. Villarrubia, Samuel N. Jones, Thomas B. Renegar, Michael T. Postek, Jun-Feng Song
Determination of the tip shape is an important prerequisite for converting the various scanning probe microscopies form imaging tools into dimensional metrology tools with sufficient accuracy to meet the critical dimension measurement requirements of the

Uncertainty Analysis for Angle Calibrations Using Circle Closure

March 1, 1998
Author(s)
William T. Estler
We analyze two types of full-circle angle calibrations: a simple closure in which a single set of unknown angular segments is sequentially compared with an unknown reference angle, and a dual closure in which two divided circles are simultaneously
Displaying 1876 - 1900 of 2183
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