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Displaying 1876 - 1900 of 2177
Dimensional measurements of importance to microlithography include feature sizes and feature placement on photomasks and wafers, overlay eccentricities, defect and particle sizes on masks and wafers, and many others. A common element is that the object
Richard M. Silver, Carsten P. Jensen, V W. Tsai, Joseph Fu, John S. Villarrubia, E C. Teague
We are developing the instrumentation and prototype samples at NIST to enable the counting of atom-spacings across linewidth features etched in silicon. This is an effort to allow the accurate counting of atom-spacings across a feature in a controlled
Ronald G. Dixson, R Koning, Theodore V. Vorburger, Joseph Fu, V W. Tsai
Because atomic force microscopes (AFMs) are capable of generating three dimensional images with nanometer level resolution, these instruments are being increasingly used in many industries as tools for dimensional metrology at sub- micrometer length scales
In scanned probe microscopy, it is necessary to know the tip's geometry in order to correct image distortions due to its finite size. Heretofore, methods have focused upon determining the tip shape by erosion of a tip characterizer of known geometry from
J Allgair, C Archie, W Banke, H Bogardus, J Griffith, H Marchman, Michael T. Postek, L Saraf, J Schlesinger, B Singh, N. Sullivan, L Trimble, Andras Vladar, A Yanof
The stringent critical dimension (CD) control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope
The National Institute of Standards and Technology, in conjunction with the Measurement Science Conference, conducted an industry-needs workshop on February 4, 1998, on issues with U.S. manufacturing companies, particularly smaller ones, may have in
Steven D. Phillips, Bruce R. Borchardt, William T. Estler, J Buttress
This paper examines the measurement uncertainty of small circular features as a function of the sampling strategy; i.e., the number and distribution of measurement points. Specifically, we examine measuring a circular feature using a three-point sampling
Beginning on or about April 1, 1997, the National Institute of Standards and Technology (NIST) received partial support from SEMATECH to collaborate in a program designated 1997-1998 NIST/SEMATECH Collaboration for Improvement of High-Accuracy Critical
This paper reports the results of the finite element analysis and in-situ testing of a large-scale (4 m x 10 m) pneumatically isolated concrete slab are reported. The slab was constructed as a design prototype for next generation metrology laboratories at
H Edwards, J Jorgensen, John A. Dagata, Y Strausser, J Schneir
We report a study of a fundamental limit to the accuracy of vertical measurements made using scanning-probe microscopes (SPM): the short-term stability of a vertical calibration using a waffle-pattern artifact. To test the instrumental component of this
Egon Marx, I J. Malik, Y Strausser, T Bristow, N Poduje, J C. Stover
Power spectral densities (PSDs) were used to characterize a set of surfaces over a wide range of lateral as well as perpendicular dimensions. Twelve 200-mm-diameter Si wafers were prepared and the surface finishes ranged from as-ground wafers to epitaxial
Samuel Dongmo, John S. Villarrubia, Samuel N. Jones, Thomas B. Renegar, Michael T. Postek, Jun-Feng Song
Determination of the tip shape is an important prerequisite for converting the various scanning probe microscopies form imaging tools into dimensional metrology tools with sufficient accuracy to meet the critical dimension measurement requirements of the
We analyze two types of full-circle angle calibrations: a simple closure in which a single set of unknown angular segments is sequentially compared with an unknown reference angle, and a dual closure in which two divided circles are simultaneously
The use of the atomic force microscope (AFM) to characterize surface structures for industrial applications is rapidly increasing. To compare the results obtained by different instruments and to achieve high accuracy, the scales of an AFM must be
K Matsumoto, Y Gotoh, T Maeda, John A. Dagata, J S. Harris
Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved
Jun-Feng Song, Samuel R. Low III, David J. Pitchure, Theodore V. Vorburger
Recent developments in standard hardness machines and microform calibration techniques have made it possible to establish a worldwide unified Rockwell hardness scale with metrological traceability. This includes the establishments of the reference
This paper describes the combination of previously-developed component placement and routing algorithms into an integrated computational approach to product layout optimization. Previous work introduced simulated annealing-based algorithms for optimal
This paper presents an integrated framework for assembly design. The framework will allow the designer to represent knowledge about the design process and constraints as well as information about the artifact being designed, design history and rationale
O Glembocki, J Tuchman, John A. Dagata, K Ko, S Pang, C Stutz
Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-GaAs
Within the National Institute of Standards and Technology (NIST), which administers the Malcolm Baldrige National Quality Award (MBNQA), a NIST technical division has initiated a Baldrige-based effort to increase the effectiveness of its research and