Capacitive readout technique for studies of dissipation in GaN nanowire mechanical resonators

Published

November 11, 2011

Author(s)

Kristine A. Bertness, Joshua R. Montague, Norman A. Sanford, Victor Bright, Charles T. Rogers

Abstract

A variable-temperature, homodyne reflectometry measurement technique for detecting nanoscale mechanical motion has recently been developed. We have extended this technique to make the first all-electrical measurements of an ensemble of as-grown, c-axis, single-crystal, gallium nitride (GaN) nanowires. These nanowires are approximately 15 µυm in length, 100 nm in diameter, have fundamental resonance frequencies near 1 MHz, and mechanical quality factors, Q, (resonance frequency divided by resonance width) in excess of 104. These high-Q values are sensitive to surface conditions and offer the opportunity to study intrinsic damping mechanisms in the nanoscale resonators. The new microwave measurement technique has allowed us to study the ensemble behavior of nanowire resonances while varying extrinsic variables (e.g. temperature) and obtain statistics on nanowire resonance behavior. Our apparatus allows measurements to be made in either a two-phase lock-in mode, or in a power spectrum mode, both of which have unique advantages. Our measurements demonstrate a position spectral noise floor of 0.3 nm/√√Hz, largely set by the dynamic range of our microwave readout system.

Proceedings Title

Proceedings of the International Mechanical Engineering Congress & Exposition

Conference Dates

November 11-17, 2011

Conference Location

Denver, CO

Conference Title

IMECE 2011

Pub Type

Conferences

Citation

Bertness, K. , Montague, J. , Sanford, N. , Bright, V. and Rogers, C. (2011), Capacitive readout technique for studies of dissipation in GaN nanowire mechanical resonators, Proceedings of the International Mechanical Engineering Congress & Exposition, Denver, CO (Accessed April 18, 2024)