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Displaying 926 - 950 of 1733

Characterization of Atomic Layer Deposition Using X-Ray Reflectrometry

November 13, 2005
Author(s)
Donald A. Windover, N G. Armstrong, James P. Cline, P Y. Hung, A C. Diebold
This work addresses current limitations of X-ray reflectometry (XRR) for modeling thin films and provides a basis for their improvement. Better accuracy in the characterization of novel thin film structures requires better model selection techniques and

Composition and Carrier Concentration Dependence of the Electronic Structure of InyGa1-yAs1-xNx Films With Nitrogen Mole Fraction Less Than 0.012

November 1, 2005
Author(s)
Youn S. Kang, Lawrence H. Robins, Anthony Birdwell, Alexander J. Shapiro, W. R. Thurber, Mark D. Vaudin, M M. Fahmi, D Bryson, S N. Mohammad
The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown bynitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance PR spectroscopy at temperatures between 20 and 300 K. The films were approximately 0.5

Fracture Strength of Silicon Carbide Microspecimens

October 1, 2005
Author(s)
W N. Sharpe, O Jadaan, G M. Beheim, George D. Quinn, N N. Nemeth
Micro silicon carbide tension specimen were prepared with straight, curved, and notched gage lengths. These were tested to failure and the strengths analyzed by Weibull statistics. Fractographic analysis confirmed that strength limiting flaws were etch
Displaying 926 - 950 of 1733
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