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Displaying 62551 - 62575 of 74239

Secondary Ion Yield Matrix Effects in SIMS Depth Profiles of Si/Ge Multilayers

April 1, 1989
Author(s)
John G. Gillen, J M. Phelps, Randall W. Nelson, Peter Williams, Steven M. Hues
Thin multilayer samples of Si/Ge, with individual layer thicknesses of 4-33 nm, have been analyzed by secondary ion mass spectrometry (SIMS) using Ar+, O2+ and Cs+ primary ion beams. Bombardment with both Ar+ and O2+ produced positive secondary ion depth

Use of Thorium as a Target in Electron Spin Analyzers

April 1, 1989
Author(s)
Jabez McClelland, M Scheinfein, Daniel T. Pierce
Measurements of the effective Sherman function have been carried out for 10-100-keV spin-polarized electrons scattering from a thick thorium target in a retarding Mott analyzer. At 20 and 100 keV the dependence on the maximum energy loss accepted by the
Displaying 62551 - 62575 of 74239
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