May 1, 1994
Author(s)
John A. Dagata, O Glembocki, J Tuchman, K Ko, S Pang
Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs, the Fermi level pins