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Displaying 53526 - 53550 of 74191

The Proposed Smart Transducer Interface Standard

January 1, 1998
Author(s)
Kang B. Lee
A proposed smart transducer interface standard, P1451 is being developed by TC9, Technical Committee on Sensor Technology, of the Instrumentation and Measurement Society of the Institute of Electrical and Electronic Engineers (IEEE). The proposed standard

The Role of Space Charge in Scanned Probe Oxidation

January 1, 1998
Author(s)
John A. Dagata
The growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in-situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process

The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST

January 1, 1998
Author(s)
V W. Tsai, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, R Koning, Richard M. Silver, E. C. Williams
Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice

Time Domain Modal Estimation

January 1, 1998
Author(s)
S Fahey, Jon R. Pratt
In a previous technical feature,2 we described some motives for performing structural dynamic tests and subsequently reviewed some frequency domain techniques for uncovering modal parameters. This time, we take up some applicable time domain algorithms by

Time-Dependent Conductance of Pd-Dosed SnO2 (110)

January 1, 1998
Author(s)
Richard E. Cavicchi, V Sukharev, Stephen Semancik
Time-dependent phenomena related to the reaction of ultrathin films of Pd deposited on SnO2 (110) surfaces of differing oxygen content have been investigated. Conductance measurements and x-ray photoemission spectroscopy (XPS) were used to characterize
Displaying 53526 - 53550 of 74191
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