August 1, 2004
      
                  
        
  Author(s)
  Sei-Hyung  Ryu,   Sumi  Krishnaswami,   Michael  O'Loughlin,   James  Richmond,   Anant  Agarwal,   John W. Palmour,   Allen R. Hefner Jr.
 
       
            
    
    
        10 kV, 123 mΩ}-cm 2 Power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in R on,sp, compared to previously reported value, was achieved by using an 8 x 1014 cm-3 doped, 85 υm thick drift epilayer. An effective channel mobility of 22 cm2/Vs was