November 22, 2005
      
                  
        
  Author(s)
  Safak  Sayan,   Nhan V. Nguyen,   James R. Ehrstein,   James J. Chambers,   Mark R. Visokay,   Manuel  Quevedo-Lopez,   Luigi  Colombo,   T  Yoder,   Igor  Levin,   Daniel  Fischer,   M  Paunescu,   Ozgur  Celik,   Eric  Garfunkel
 
       
            
    
    
        We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and conduction