Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 29401 - 29425 of 143796

Neutron Limit on the Strongly-Coupled Chameleon Field

March 11, 2016
Author(s)
Michael G. Huber, Muhammad D. Arif, David G. Cory, R. Haun, B. Heacock, Joachim Nsofini, Dimitry A. Pushin, P Saggu, C.B Shahi, William M. Snow, A.R. Young
The physical origin of the dark energy which causes the accelerated expansion rate of the universe is one of the major open questions of cosmology. One set of theories postulates the existence of a self-interacting scalar eld for dark energy coupling to

Oscillator PM-noise reduction from correlated AM-noise

March 11, 2016
Author(s)
Archita Hati, Craig W. Nelson, David A. Howe
We demonstrate a novel technique for reducing the phase modulation (PM) noise of an oscillator in steady state as well as under vibration. It utilizes correlation between PM noise and amplitude modulation (AM) noise that can originate from the oscillator's

Field Effects of Current Crowding at Metal-MoS2 Contacts

March 10, 2016
Author(s)
Hui H. Yuan, Guangjun Cheng, Sheng Yu, Angela R. Hight Walker, Curt A. Richter, Qiliang Li
Gate assisted contact-end Kelvin test structures and gate assisted 4-probe structures have been designed and fabricated to measure the field effects of current crowding at the source/drain contacts of top-gate MoS2 field effect transistors. The transistors

Mobility overestimation due to gated contacts in organic field-effect transistors

March 10, 2016
Author(s)
Emily G. Bittle, David J. Gundlach, Oana Jurchescu, James I. Basham, Thomas Jackson
Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide

Optical Tracking of Nanoscale Particles in Microscale Environments

March 10, 2016
Author(s)
Pramod Mathai, James A. Liddle, Samuel M. Stavis
The trajectories of nanoscale particles through microscale environments record useful information about both the particles and the environments. Optical microscopes provide efficient access to this information through measurements of light in the far field

CONTAM RESULTS EXPORT TOOL

March 9, 2016
Author(s)
Brian Polidoro, Lisa Ng, William Stuart Dols
CONTAM is a multizone indoor air quality and ventilation analysis program developed by the National Institute of Standards and Technology (NIST). Since CONTAM simulation files are binary and not human-readable, the CONTAM Results Export Tool was created to

Process Optimization for Lattice-Selective Wet Etching of Crystalline Silicon Structures

March 9, 2016
Author(s)
Ronald G. Dixson, William F. Guthrie, Richard A. Allen, Ndubuisi G. Orji, Michael W. Cresswell, Christine E. Murabito
Lattice-selective etching of silicon is used in a number of applications, but it is particularly valuable in those for which the lattice-defined sidewall angle can be beneficial to the functional goals. A relatively small but important niche application is

SRM 1967a: High-Purity Platinum Thermoelement

March 9, 2016
Author(s)
Karen M. Garrity, Weston L. Tew, Dean C. Ripple
Consisting of a 1 m long piece of 0.5 mm diameter platinum wire, SRM 1967a meets the requirements for a thermoelectric reference material for temperatures from 196 °C up to approximately 1700 °C. We have tested the thermoelectric emf of four SRM 1967a

Topochemical Nitridation with Anion Vacancy-Assisted N 3- /O 2- Exchange

March 9, 2016
Author(s)
Riho Mikita, Tomoko Aharen, Takafumi Yamamoto, Fumitaka Takeiri, Tang Ya, Wataru Yoshimune, Koji Fujita, Suguru Yoshida, Katsuhisa Tanaka, Dmitry Batuk, Artem M. Abakumov, Craig Brown, Yoji Kobayashi, Hiroshi Kageyama
We present how the introduction of anion vacancies in oxyhydrides enables a route to access new oxynitrides, by conducting ammonolysis of perovskite oxyhydride EuTiO 3-xH x (x0.18). At 400 °C, similar to our studies on BaTiO 3-xH x, hydride lability
Displaying 29401 - 29425 of 143796
Was this page helpful?