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Displaying 726 - 750 of 1340

Heterogeneous photodiodes on silicon nitride waveguides

May 11, 2020
Author(s)
Qianhuan Yu, Junyi Gao, Nan Ye, Baiheng Chen, Keye Sun, Linli Xie, Kartik Srinivasan, Michael Zervas, Gabriele Navickaite, Michael Geiselmann, Andreas Beling
… is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic …

Direct measurement of the static and 1 transient magneto-optical permittivity of cobalt across the entire M-edge in a reflection geometry by use of polarization scanning

January 30, 2018
Author(s)
Dmitriy Zusin, Phoebe Tengdin, Maithreyi Gopalakrishnan, Christian Gentry, Adam Blonsky, Michael Gerrity, Justin Shaw, Hans Nembach, Thomas J. Silva, Peter Oppeneer, Henry C. Kapteyn, Margaret M. Murnane
… the static and 1 transient magneto-optical permittivity of cobalt across the entire M-edge in a reflection geometry by …

Manufacturing USA Program Strategic Plan

March 17, 2026
Author(s)
Robert Rudnitsky, Said Jahanmir, Zahraha Brunner, Kelley Rogers, Michael Molnar, Mai Tran
… , Zahraha Brunner , Kelley Rogers , Michael Molnar , Mai Tran

Radio Frequency and Analog/Mixed-Signal Technologies

January 20, 2012
Author(s)
Herbert S. Bennett, John J. Pekarik
… compound semiconductors composed of elements from group III and V in the periodic table. Compound semiconductors … CMOS), and SiGe heterojunction bipolar transistors (HBTs), III V compound semiconductor devices, High-Voltage MOS, and …
Displaying 726 - 750 of 1340
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