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FREE-STANDING SELF-ASSEMBLIES OF GALLIUM NITRIDE NANOPARTICLES: A REVIEW

Published

Author(s)

Winnie K. Wong-Ng, Yucheng Lan, Jianye Li, Rola M. Derbeshi, Abdellah Lisfi

Abstract

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4 eV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.
Citation
Micromachines
Volume
7

Keywords

self-assembly, nanoparticles, GaN nitride, renewable energy, review

Citation

Wong-Ng, W. , Lan, Y. , Li, J. , Derbeshi, R. and Lisfi, A. (2016), FREE-STANDING SELF-ASSEMBLIES OF GALLIUM NITRIDE NANOPARTICLES: A REVIEW, Micromachines, [online], https://doi.org/10.3390/mi7070121 (Accessed June 14, 2024)

Issues

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Created July 19, 2016, Updated March 26, 2019