Wong-Ng, W.
, Lan, Y.
, Li, J.
, Derbeshi, R.
and Lisfi, A.
(2016),
FREE-STANDING SELF-ASSEMBLIES OF GALLIUM NITRIDE NANOPARTICLES: A REVIEW, Micromachines, [online], https://doi.org/10.3390/mi7070121
(Accessed March 13, 2025)
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FREE-STANDING SELF-ASSEMBLIES OF GALLIUM NITRIDE NANOPARTICLES: A REVIEW
Published
Author(s)
, Yucheng Lan, Jianye Li, Rola M. Derbeshi, Abdellah Lisfi
Abstract
Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4 eV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.Citation
Micromachines
Volume
7
Pub Type
Journals
Download Paper
Keywords
self-assembly, nanoparticles, GaN nitride, renewable energy, review
Citation
Issues
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Created July 19, 2016, Updated March 26, 2019