Heterogeneous photodiodes on silicon nitride waveguides

Published

May 11, 2020

Author(s)

Qianhuan Yu, Junyi Gao, Nan Ye, Baiheng Chen, Keye Sun, Linli Xie, Kartik Srinivasan, Michael Zervas, Gabriele Navickaite, Michael Geiselmann, Andreas Beling

Abstract

Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.

Citation

Optics Express

Volume

28

Issue

10

Pub Type

Journals

Download Paper

DOI Link

Citation

Yu, Q. , Gao, J. , Ye, N. , Chen, B. , Sun, K. , Xie, L. , Srinivasan, K. , Zervas, M. , Navickaite, G. , Geiselmann, M. and Beling, A. (2020), Heterogeneous photodiodes on silicon nitride waveguides, Optics Express, [online], https://doi.org/10.1364/OE.387939 (Accessed April 29, 2024)