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Heterogeneous photodiodes on silicon nitride waveguides

Published

Author(s)

Qianhuan Yu, Junyi Gao, Nan Ye, Baiheng Chen, Keye Sun, Linli Xie, Kartik Srinivasan, Michael Zervas, Gabriele Navickaite, Michael Geiselmann, Andreas Beling

Abstract

Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.
Citation
Optics Express
Volume
28
Issue
10

Citation

Yu, Q. , Gao, J. , Ye, N. , Chen, B. , Sun, K. , Xie, L. , Srinivasan, K. , Zervas, M. , Navickaite, G. , Geiselmann, M. and Beling, A. (2020), Heterogeneous photodiodes on silicon nitride waveguides, Optics Express, [online], https://doi.org/10.1364/OE.387939 (Accessed March 5, 2024)
Created May 11, 2020, Updated November 28, 2023