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Heterogeneous photodiodes on silicon nitride waveguides



Qianhuan Yu, Junyi Gao, Nan Ye, Baiheng Chen, Keye Sun, Linli Xie, Kartik Srinivasan, Michael Zervas, Gabriele Navickaite, Michael Geiselmann, Andreas Beling


Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.
Optics Express


Yu, Q. , Gao, J. , Ye, N. , Chen, B. , Sun, K. , Xie, L. , Srinivasan, K. , Zervas, M. , Navickaite, G. , Geiselmann, M. and Beling, A. (2020), Heterogeneous photodiodes on silicon nitride waveguides, Optics Express, [online], (Accessed July 15, 2024)


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Created May 11, 2020, Updated November 28, 2023