January 1, 2005
Author(s)
Norman Sanford, Larry Robins, Matthew H. Gray, J E. Van Nostrand, C Stutz, R Cortez, Albert Davydov, Alexander J. Shapiro, Igor Levin, Alexana Roshko
GaN nanorods were grown on c-plane sapphire substrates under N-rich conditions by plasma-assisted molecular-beam epitaxy. Scanning electron microsopy revealed densely packed nanorods of hexagonal cross section with diameters ranging from roughly 40 to 100