December 1, 2000
Author(s)
P E. Thompson, K D. Hobart, M E. Twigg, S L. Rommel, N Jin, P R. Berger, R Lake, A C. Seabaugh, P Chi, David S. Simons
… side by 1 nm Si, had a J p = 2.3 kA/cm 2 and PVCR = 2.05. A p-on-n tunnel diode with an 8 nm Si spacer (5 nm grown … 3 nm grown at 550 C) had a J p = 2.6 kA/cm 2 and PVCR = 1.7. …