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Displaying 426 - 450 of 2521

Interoperability: linking design and tolerancing with metrology

June 2, 2016
Author(s)
Ed Morse, Saeed Heysiattalab, Allison Barnard Feeney, Thomas D. Hedberg Jr.
On October 30, 2014 the American National Standards Institute (ANSI) approved QIF v 2.0 (Quality Information Framework, version 2.0) as an American National Standard. Subsequently in early 2016 QIF version 2.1 was approved. This paper describes how the QIF

High Inversion Current in Silicon Nanowire Field Effect Transistors

November 30, 2004
Author(s)
Sang-Mo Koo, Jin-Ping Han, Eric M. Vogel, Curt A. Richter, J. Vahakangas, Akira Fujiwara
… effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional … The extracted average electron inversion mobility of the 20 nm-width nanowire channel (~960cm2/Vs) is found to be 1.7 times higher than that of the reference MOSFET (~580cm2/Vs) …

Improved Interfaces and Magnetic Properties in Spin Valves Using Ni80Fe20 Seed Layers

March 1, 2002
Author(s)
E J. Repetski, D X. Yang, H D. Chopra, P J. Chen, William F. Egelhoff Jr.
The giant magnetoresistance (GMR) NiFeO-Co-Cu based top spin valves were studied with and without NiFe as a seed layer. Microstructure examination shows that without the seed layer, the free and the pinned Co layers of the spin valves are highly irregular
Displaying 426 - 450 of 2521
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