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NIST Authors in Bold

Displaying 14976 - 15000 of 73893

A better-than-3n lower bound for the circuit complexity of an explicit function

December 15, 2016
Author(s)
Magnus G. Find, Alexander Golovnev, Edward Hirsch, Alexander Kulikov
We consider Boolean circuits over the full binary basis. We prove a $(3+\frac{1}{86})n-o(n)$ lower bound on the size of such a circuit for an explicitly defined predicate, namely an affine disperser. This improves the $3n-o(n)$ bound of Norbert Blum (1984)

Contour Metrology using Critical Dimension Atomic Force Microscopy

December 15, 2016
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, Boon Ping Ng, Andras Vladar, Michael T. Postek
The critical dimension atomic force microscope (CD-AFM) has been proposed as an instrument for contour measurement and verification – since its capabilities are complementary to the widely used scanning electron microscope (SEM). Although data from CD-AFM

Network Charter: Manufacturing USA

December 15, 2016
Author(s)
Michael F. Molnar
Under the authority of the Revitalize American Manufacturing and Innovation Act of 2014, the Secretary of Commerce shall establish the Network for Manufacturing Innovation, generally called the Manufacturing USA network. The network, along with its

Online Airtightness Calculator for the US, Canada and China

December 15, 2016
Author(s)
Som Shrestha, Lisa Ng, Steven Emmerich, Diana Hun, Laverne Dalgleish
The contribution of air leakage to heating and cooling loads has been increasing as the thermal resistance of building envelopes continues to improve. Easy-to-access data are needed to convince building owners and contractors that enhancing the

Real space mean-field theory of a spin-1 Bose gas in synthetic dimensions

December 15, 2016
Author(s)
Ian B. Spielman, Justin H. Wilson, Hilary Hurst, Jed Pixley, Stefan Natu
The internal degrees of freedom provided by ultracold atoms give a route for realizing higher dimensional physics in systems with limited spatial dimensions. Non-spatial degrees of freedom in these systems are dubbed “synthetic dimensions”. This connection

Transactive Energy Application Landscape Scenarios

December 15, 2016
Author(s)
David G. Holmberg, David Hardin, Ronald Melton, Ron Cunningham, Steve Widergren
This paper presents an analysis of the transactive energy (TE) application landscape, specifically examining the transactive process, business functions, actors in different smart grid (SG) application domains, and time scales. These process steps

60 Year Anniversary of Applied Radiation and Isotopes

December 14, 2016
Author(s)
Bert M. Coursey
Those readers who have a library with the first bound copies of ARI may find it enjoyable to compare Volume 1, No.1 from 1956 with an issue from Volume 118 in 2016. The range of applications has shifted away from agricultural and industrial uses of

Trapping States of Mixed-Isomer Organic Semiconductors within Organic Field-Effect Transistors

December 14, 2016
Author(s)
Peter Diemer, Jacori Hayes, Evan Welchman, Rawad Hallani, Sujitra Pookpanratana, Christina Hacker, Curt A. Richter, Timo Thonhauser, Oana Jurchescu
Organic field effect transistor (OFET) performance is dictated by the composition and geometry of the device, as well as the quality of the organic semiconductor (OSC) film, which strongly depends on the purity and structural defects. When present, these

Guide Brief 5: Assessing Energy System Dependencies

December 13, 2016
Author(s)
Community Resilience Program NIST
A major aspect of characterizing the built environment is identifying key infrastructure dependencies that may exist. Some of these dependencies are obvious; others are not. This Guide Brief focuses on Step 2, understanding the built environment, and

In situ Atomic-Scale Probing of Reduction Dynamics of 2-Dimensional Fe2O3 Nanostructures

December 13, 2016
Author(s)
Wenhui Zhu, Jonathan P. Winterstein, Wei-Chang Yang, Lu Yuan, Renu Sharma, Guangwen Zhou
Atomic-scale structure dynamics and phase transformation pathway was probed, in situ, during the reduction of bi-crystalline Fe2O3 nanostructures in H2 by using an environmental transmission electron microscope. It was found that the reduction commenced

Multiplexed sub-Doppler spectroscopy with an optical frequency comb

December 13, 2016
Author(s)
David A. Long, Adam J. Fleisher, David F. Plusquellic, Joseph T. Hodges
An optical frequency comb generated with an electro-optic phase modulator and a chirped radiofrequency waveform is used to perform saturation spectroscopy on the D1 and D2 transitions of atomic potassium. With a comb tooth spacing of 2 MHz and a bandwidth

NIST Handbook 105-4: Specifications and Tolerances for Reference Standards and Field Standard Weights and Measures, Specifications and Tolerances for Liquefied Petroleum Gas and Anhydrous Ammonia Liquid Volumetric Provers (2016 Ed.)

December 13, 2016
Author(s)
Georgia L. Harris, Val R. Miller
These specifications and tolerances are recommended as minimum requirements for standards used by state and local weights and measures officials and others in the regulatory verification of meters used in quantity determination of pressurized liquid

Rheological Measurement of Suspensions Without Slippage: Experimental and Model

December 13, 2016
Author(s)
Alex Olivas, Michelle A. Helsel, Nicos Martys, Chiara C. Ferraris, William L. George, Raissa Ferron
The conclusion of international studies was that the optimal approach to calibrate concrete rheometers would be to develop a non-Newtonian standard reference material (SRM) that contained inclusions similar in size to aggregates used commonly in concrete

Event model to facilitate data sharing among services

December 12, 2016
Author(s)
Olivera Kotevska, Judith R. Gelernter
Development of smart city services is presently hindered because the data is too heterogeneous, despite the increasing availability of data in open data initiatives. We determined metadata fields and semantics for our proposed model after a survey of other

InGaAs Inversion Layer Mobility and Interface Trap Density from Gated Hall Measurements

December 12, 2016
Author(s)
Thenappan Chidambaram, Dmitry Veksler, S Madisetti, Michael Yakimov, Vadim Tokranov, Serge Oktyabrskiy
In this work, we use gated Hall method for direct measurement of free carrier density and electron mobility in inversion InGaAs MOSFET channels. At room temperature, the highest Hall mobility of 1800 cm2/Vs is observed at electron density in the channel
Displaying 14976 - 15000 of 73893
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