Robins, L.
, Armstrong, J.
, Vaudin, M.
, Bouldin, C.
, Woicik, J.
, Paul, A.
, Thurber, W.
and Marinenko, R.
(2017),
Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04<x<0.47, Physical Review B (Condensed Matter and Materials Physics)
(Accessed September 15, 2024)
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Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04
Published
Author(s)
, , , , , , ,
Abstract
The structures of a set of InxGa1-xN films grown by atmospheric-pressure MOCVD onGaN buffer layers on c-plane sapphire, with compositions in the range 0.04 < x < 0.47, were characterized by x-ray diffraction (XRD). Several films were also examined by extended x-ray absorption fine structure (EXAFS). The optical properties of the films were investigated by room-temperature optical transmittance and cathodoluminescence spectroscopies. The average indium fraction (xavg) in each film was measured to high accuracy by wavelength-dispersive x-ray spectroscopy (WDS) in an electron microprobe. GaN/sapphire and InN/sapphire films were also examined by XRD, WDS, and optical spectroscopy for comparison with the InxGa1-xN alloys.Citation
Physical Review B (Condensed Matter and Materials Physics)
Pub Type
Journals
Keywords
cathodoluminescence, compositional inhomogeneity, EXAFS, indium gallium nitride, indium nitride, optical absorption, optical transmittance, phase separation, x-ray diffraction
Citation
Issues
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Created February 19, 2017