October 12, 2021
Author(s)
A Syrkin, V Ivantsov, A Usikov, Vladimir A. Dmitriev, G Chambard, P Ruterana, Albert Davydov, Siddarth Sundaresan, E Lutsenko, A V. Mudryi, E D. Readinger, G D. Chern-Metcalfe, M Wraback
We report on the first time demonstration and properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved characteristics on template substrates. InN layers were grown on GaN/sapphire HVPE grown templates. The