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Displaying 7026 - 7050 of 143796

Annealing Temperature Dependences of Magnetization Reversal in Exchange Biased Bilayers

October 12, 2021
Author(s)
C G. Lee, V S. Gornakov, B H. Koo, K S. Shin, Robert McMichael, Andrew P. Chen, William F. Egelhoff Jr.
The thermal stability of the hysteretic properties and domain structures of exchange-coupled Co-Fe/Ir-Mn and Ni-Fe/Ir-Mn bilayers was studied. Using the magneto-optical indicator film technique, X-ray diffractometry, and VSM, we have revealed that the

Anomalous Asymmetric Intermixing in Pt/Ti

October 12, 2021
Author(s)
P Sule, M. Menyhard, L Kotis, J Labar, William F. Egelhoff Jr.
The ion-sputtering induced intermixing is studied by Monte-Carlo TRIM, molecular dynamics (MD) simulations, and Auger electron spectroscopy depth pro_ling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers

Anomalously Fast Decay of the LH-HH Exciton Raman Coherence

October 12, 2021
Author(s)
C N. Borca, A G. VanEngen Spivey, Steven T. Cundiff
We perform a three-pulse transient four-wave-mixing experiment on a weakly disordered GaAs/AlGaAs multiple quantum well. This allows us to measure both the decay of the Raman coherence between the heave-hole and light -hole excitons in a semiconductor

Anthrax Toxin Functional Assay: Lethal Factor Binding to Protective Antigen Ion Channel

October 12, 2021
Author(s)
Kelly Halverson, R G. Panchal, T L. Nguyen, S Little, Martin Misakian, Sina Bavari, John J. Kasianowicz
Bacillus anthracis secretes three toxins (protective antigen, PA; lethal factor, LF; and edema factor, EF) that are the molecular basis of anthrax-induced cell death. We studied the functional interaction between LF and activated PA (PA63) in planar

Application of -Fe203 Bottom GMR Spin-Valve for Magnetoresistive Random Access Memory (MRAM)

October 12, 2021
Author(s)
S E. Bae, William F. Egelhoff Jr., P J. Chen, S Zurn, L Sheppard, E J. Torok, J H. Judy
The possibility of the application of -Fe203 bottom GMR spin-valve for magnetoresistive random access memory (MRAM) device has been investigated for the first time from the point view of magnetic properties of spin-valve, device fabrication, and thermal

Applications of Giant Magnetoresitance Spin-Valve Transpinnor for Magneto-Electronics

October 12, 2021
Author(s)
S E. Bae, S Zurn, William F. Egelhoff Jr., P J. Chen, E J. Torok, R Spitzer, J H. Judy
This paper discusses the applications of a Transpinnor, a new kind of active solid-state device utilizing giant magnetoresitance (GMR) spin valves, for the state of art of magneto-electronic device technology. A Transpinnor is a modified Wheatstone bridge

Arrhenius-like Temperature Dependence of the Segmental Relaxation below T g

October 12, 2021
Author(s)
P A. O'Connell, G B. McKenna
In a recent paper DiMarzio and Yang [J. Res. Natl. Inst. Stds. Technol., 102, 135 (1997)] predicted that transport properties such as viscosity and diffusion coefficient do not follow the typical WLF- or Vogel-Fulcher-type of temperature dependence as the

Arsenic and Antimony Implantations in SiC

October 12, 2021
Author(s)
J R. Tucker, M Rao, O W. Holland, P Chi, N A. Papanicolaou, J A. Freitas
Single and multiple energy As and Sb implantations were performed into p-type 6H-SiC epitaxial layers at room temperature (RT) and 800 degrees C. Secondary ion mass spectrometry measurements showed severe out-diffusion of the implants for annealing

Artifacts That Could Be Misinterpreted as Ballistic Magnetoresistance

October 12, 2021
Author(s)
William F. Egelhoff Jr., L Gan, Erik B. Svedberg, Cedric J. Powell, Alexander J. Shapiro, Robert McMichael, J Mallett, Thomas P. Moffat, Mark D. Stiles
Theoretical physics suggests that very large magnetoresistance (MR) values might be found in certain magnetic nanocontacts if a magnetic domain wall could be localized in them with a length scale that would allow conduction electrons to transit the wall
Displaying 7026 - 7050 of 143796
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