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Physics

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Displaying 2276 - 2300 of 2493

Accurate spectral characterization of polarization-dependent loss

February 1, 2003
Author(s)
Rex M. Craig
Building on previous work, a rapid, automated, non-mechanical measurement system for spectral characterization of polarization-dependent loss (PDL) has been developed. A deterministic fixed-states Mueller/Stokes method in conjunction with real-time

Physics Laboratory: 2002 Activities, Accomplishments and Recognition

February 1, 2003
Author(s)
Jonathan E. Hardis, William R. Ott, G G. Wiersma
This report summarizes the research and measurement science carried out during calendar year 2001 in the NIST Physics Laboratory. The Laboratory supports U.S. industry, government, and the scientific community by providing measurement services and research

Experimental Demonstration of a Technique to Generate Arbitrary Quantum Superposition States of a Harmonically Bound Spin-1/2 Particle

January 24, 2003
Author(s)
A Ben-kish, B M. Demarco, V Meyer, Mary A. Rowe, Joseph W. Britton, Wayne M. Itano, Branislav M. Jelenkovic, Christopher Langer, Dietrich Leibfried, Till P. Rosenband, David J. Wineland
Using a single, harmonically trapped 9Be+ ion, we experimentally demonstrate a technique for generation of arbitrary states of a two-level particle confined by a harmonic potential. Rather than engineering a single Hamiltonian that evolves the system to a

Interlaboratory comparison of InGaAsP EX-SITU characterization

January 1, 2003
Author(s)
Alexana Roshko, Kristine A. Bertness
A study to improve the accuracy of ex-situ characterization of InGaAsP materials for optoelectronics is underway. Six InGaAsP thin film specimens, with nominal photoluminescence wavelengths of 1.1, 1.3 and 1.5 mm, have been measured, with X-ray diffraction

X-ray diffraction, photoluminescence and composition standards of compound semiconductors

January 1, 2003
Author(s)
Alexana Roshko, Kristine A. Bertness, J T. Armstrong, Ryna B. Marinenko, Marc L. Salit, Lawrence H. Robins, Albert J. Paul, R J. Matyi
Work is underway to develop composition standards and standardized assessment procedures for compound semiconductors. An AlGaAs composition standard with less than 2% uncertainty is being developed. The improved accuracy of this standard is being achieved

Composition standards for III-V semiconductor epitaxial films

November 11, 2002
Author(s)
Kristine A. Bertness, Lawrence H. Robins, J T. Armstrong, Ryna B. Marinenko, Albert J. Paul, Marc L. Salit
A program is underway at NIST to establish standard reference materials (SRMs) for the calibration of instruments used to measure the chemical composition of epitaxially grown III-V semiconductor thin films. These SRMs are designed for the calibration of

Trace water detection in semiconductor-grade phosphine gas

November 11, 2002
Author(s)
Kristine A. Bertness, Susan Y. Lehman, Joseph T. Hodges, H. H. Funke, Mark W. Raynor
We are applying cavity ring-down spectroscopy (CRDS) to measure water concentrations in nitrogen and, for the first time to our knowledge, in phosphine. Semiconductor-grade phosphine cylinders from different suppliers contained water in the several ppm
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