Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Trace water detection in semiconductor-grade phosphine gas

Published

Author(s)

Kristine A. Bertness, Susan Y. Lehman, Joseph T. Hodges, H. H. Funke, Mark W. Raynor

Abstract

We are applying cavity ring-down spectroscopy (CRDS) to measure water concentrations in nitrogen and, for the first time to our knowledge, in phosphine. Semiconductor-grade phosphine cylinders from different suppliers contained water in the several ppm range. Moisture levels were also measured with point-of-use purifiers from different manufacturers in line. To date, the lowest water mole fraction measured in this system is (150 {+/-}30) x 10-9 (150 ppb) in a nitrogen matrix. Lower concentrations would be detectable at our present signal-to-noise levels. We also present material studies on AlInP grown with characterized phosphine in a gas-source molecular beam epitaxy machine.
Proceedings Title
Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo
Conference Dates
November 11-13, 2002
Conference Location
San Jose, CA

Keywords

cavity ring-down spectroscopy, impurities, phosphine, semiconductor source gases, water spectroscopy

Citation

Bertness, K. , Lehman, S. , Hodges, J. , Funke, H. and Raynor, M. (2002), Trace water detection in semiconductor-grade phosphine gas, Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo, San Jose, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30846 (Accessed April 14, 2024)
Created November 11, 2002, Updated February 19, 2017