Bertness, K.
, Lehman, S.
, Hodges, J.
, Funke, H.
and Raynor, M.
(2002),
Trace water detection in semiconductor-grade phosphine gas, Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo, San Jose, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30846
(Accessed October 18, 2025)
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Trace water detection in semiconductor-grade phosphine gas
Published
Author(s)
, , , H. H. Funke, Mark W. Raynor
Abstract
We are applying cavity ring-down spectroscopy (CRDS) to measure water concentrations in nitrogen and, for the first time to our knowledge, in phosphine. Semiconductor-grade phosphine cylinders from different suppliers contained water in the several ppm range. Moisture levels were also measured with point-of-use purifiers from different manufacturers in line. To date, the lowest water mole fraction measured in this system is (150 {+/-}30) x 10-9 (150 ppb) in a nitrogen matrix. Lower concentrations would be detectable at our present signal-to-noise levels. We also present material studies on AlInP grown with characterized phosphine in a gas-source molecular beam epitaxy machine.Proceedings Title
Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo
Conference Dates
November 11-13, 2002
Conference Location
San Jose, CA
Pub Type
Conferences
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Keywords
cavity ring-down spectroscopy, impurities, phosphine, semiconductor source gases, water spectroscopy
Citation
Issues
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Created November 11, 2002, Updated February 19, 2017