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Materials

Ceramics

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Displaying 501 - 525 of 1323

Instability of Flatband Voltage in HfO2 Gate Stack Structures under Reducing/Oxidizing Annealing Conditions

August 13, 2007
Author(s)
K Ohmori, P Ahmet, M Yoshitake, T Chikyow, K Shiraishi, K Yamabe, H Watanabe, Y Akasaka, Kao-Shuo Chang, Martin L. Green, K Yamada
We have applied a combinatorial approach to fabricate work function (WF) tuned Pt-W alloy films and used the films as metal electrodes for HfO2/SiO2/Si capacitors. As the ratio RPt of Pt to W changes from 0 to 1, the WF value varies continuously from 4.7

Measurement Science and Technology for Ceramics Innovations

July 31, 2007
Author(s)
Debra L. Kaiser, Robert F. Cook
Innovations in ceramic technologies are often driven by the discovery and introduction of a material with novel or improved behavior that enables realization of a superior component, device or system. Over the past few decades, advanced ceramic materials

Texture and Phase Analysis of a Ca 3 Co 4 O 9 / Si (100) Thermoelectric Film

July 26, 2007
Author(s)
Winnie K. Wong-Ng, Y F. Hu, Mark D. Vaudin, B He, Makoto Otani, Nathan Lowhorn, Q Li
This paper reports the texture analysis as well as the identification of two crystalline phases between a thin film of monoclinic Ca3Co4O9 and a cubic (100) Si substrate, using a diffractometer equipped with a 2-dimensional area detector. No reflections

Model, Prediction and Experimental Verification of Composition and Thickness in Continuous Spread Thin Film Combinatorial Libraries Grown by Pulsed Laser Deposition

July 16, 2007
Author(s)
Nabil Bassim, Peter K. Schenck, Makoto Otani, Hiroyuki Oguchi
Pulsed laser deposition (PLD) is a powerful technique for growing continuous spread thin film libraries of continuously varying composition as a function of position on a substrate. Continuous spread thin film libraries are grown by striking a ceramic

Domain Ordering of Strained 5ML SrTiO 3 Films on Si(001)

June 26, 2007
Author(s)
P Ryan, Joseph Woicik, D Wermeille, J.-W Kim, C S. Hellberg, H Li
We present high resolution X-ray diffraction data indicating regularly ordered square shaped coherent domains approximately 1200A in length co-existing with longer approximately 9500A correlated regions in a highly strained 5ML SrTiO3 (STO) film grown on

High Contrast Scanning Nano-Raman Spectroscopy of Silicon

June 15, 2007
Author(s)
N Lee, R Hartschuh, D Mehtani, A Kisliuk, M D. Foster, Alexei Sokolov, J F. Maguire, Martin L. Green
We have demonstrated that scanning nano-Raman spectroscopy (SNRS), generally known as tip enhanced Raman spectroscopy (TERS), with side illumination optics can be effectively used for analysis of silicon based structures at the nanoscale. Even though the
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