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Displaying 251 - 275 of 288

Regarding Electric Energy Savings, Power Factors, and Carbon Footprints: A Primer

October 31, 2009
Author(s)
Martin Misakian, Thomas L. Nelson, William E. Feero
A short primer is presented which describes the underlying physical theory of certain devices that reduce the current drawn from power distribution lines by improving the power factor of residential electric circuits. A brief discussion is provided of the

Power Conditioning System Technologies for High-Megawatt Fuel Cell Plants

August 7, 2008
Author(s)
Allen R. Hefner Jr.
High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE

Electro-Thermal Simulation of a 100 A, 10 kV Half-Bridge SiC MOSFET/JBS Power Module

June 13, 2008
Author(s)
Tam H. Duong, Jose M. Ortiz, R. N. Raju, Allen R. Hefner Jr.
This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II program

Thermal Network Component Models for 10 kV SiC Power Module Packages

June 13, 2008
Author(s)
Jose M. Ortiz, Madelaine H. Hernandez, Tam H. Duong, Scott G. Leslie, Allen R. Hefner Jr.
The DARPA WBGS-HPE program is developing 100 A, 10 kV SiC power modules to demonstrate the viability of a 2.75 MVA Solid State Power Substation that uses 10 kV, 20 kHz switching-capable devices. Thermal network component models for these modules are

High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules

June 2, 2008
Author(s)
David W. Berning, Tam H. Duong, Jose M. Ortiz, Angel Rivera, Allen R. Hefner Jr.
A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have shown

Reference Values for Dynamic Calibration of PMUs

January 7, 2008
Author(s)
Gerard N. Stenbakken, Thomas L. Nelson, Ming Zhou, Virgilio A. Centeno
This paper discusses measurements of the dynamic performance of electric power Phasor Measurement Units, PMUs, and their relation to the requirements of the IEEE Synchrophasor Standard C37.118-2005. In particular, it proposes a new method for monitoring
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