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Electronics

Magnetoelectronics

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Displaying 76 - 100 of 129

Electrically-protected resonant exchange qubits in triple quantum dots

July 31, 2013
Author(s)
Jacob M. Taylor, Vanita Srinivasa, Medford Jim
We present a modulated microwave approach for quantum computing with qubits comprising three spins in a triple quantum dot. This approach includes single- and two-qubit gates that are protected against low-frequency electrical noise, due to an operating

The Resonant Exchange Qubit

July 31, 2013
Author(s)
Jacob M. Taylor, Medford Jim, Johannes Beil, Emmanuel Rashba, H Lu, A. C. Gossard, C. M. Marcus
We introduce a solid-state qubit in which exchange interactions among confined electrons provide both the static longitudinal field and the oscillatory transverse field, allowing rapid and full qubit control via rf gate-voltage pulses. We demonstrate two

Properties of magnetic barrier structures for superconducting-magnetic hybrid Josephson junctions

July 7, 2013
Author(s)
Burm Baek, Samuel P. Benz, William H. Rippard, Stephen E. Russek, Paul D. Dresselhaus, Horst Rogalla, Matthew R. Pufall
If Josephson and spintronic technologies can be successfully integrated to produce a cryogenic memory that can be controlled with single-flux quantum pulses, then they may enable ultra-low-power, high-speed computing. We have developed hybrid Josephson

Spin-Transfer Nano-Oscillators

January 7, 2013
Author(s)
Stephen E. Russek, Ranko R. Heindl, Thomas Cecil, William H. Rippard
Spin transfer nano-oscillators are small multilayer magnetic devices that undergo microwave oscillations and output a microwave voltage when a bias current is applied. The oscillation frequency is tunable, over a range of 0.5 GHz to 225 GHz, by varying the

Observation of spin-valve effect in Alq3 using a low work function metal

September 7, 2012
Author(s)
Hyuk-Jae Jang, Kurt Pernstich, David J. Gundlach, Oana Jurchescu, Curt A. Richter
We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices exhibit

Current-induced synchronized switching of magnetization

August 7, 2012
Author(s)
Kyung Jin Lee, Soo-Man Seo
We propose a multilayer structure that allows a reduced switching current with maintaining high thermal stability of the magnetization. It consists of a perpendicular polarizer, a perpendicular free-layer, and an additional free-layer having in-plane

Spin transport in memristive devices

January 26, 2012
Author(s)
Hyuk-Jae Jang, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter
We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior

Magnetic Tunnel Junctions Fabricated Using Ion Neutralization Energy as a Tool

July 25, 2011
Author(s)
Joshua M. Pomeroy, Holger Grube, Pei-Ling Sun, Yun-Che Wang, Russell E. Lake
The neutralization energy of highly charged ions (HCIs) is used as an intermediate processing step to modify the electrical properties of magnetic tunnel junctions (MTJs), providing an additional degree of freedom in the devices’ fabrication. While most
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