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Julia Y. Chan, Wilma Feb-Ayala, J. M. Loezos, L D. Rotter, Lyle E. Levine, Richard G. Geyer
Dielectric ceramics for wireless communications exhibiting modest permittivity, high quality factor (Q), and near-zero temperature coefficient are needed for high-frequency, high power applications. Efforts are in progress to replace Ta 2O 5-based ceramics
M Erdtmann, M T. Currie, Joseph Woicik, David R. Black
State-of-the-art applications involving relaxed SiGe virtual substrates have a low tolerance for defectivity, i.e., threading dislocation density (TDD) and dislocation pile-up density (DPD). Yet in order for virtual substrates to achieve relaxation, it is
Geometric and crystallographic measurements of grain boundary thermal grooves and surface faceting behavior as a function of orientation have been used to determine the surface energy anisotropy of SrTiO 3 at 1400 C in air. Under these conditions, thermal
P Ryan, R A. Rosenberg, D J. Keavney, J W. Freeland, Joseph Woicik
Iron deposition on ordered and disordered GaN (0001) surfaces result in dramatically different magnetic over-layer characteristics. On the ordered surface, nitrogen rapidly desorbs upon Fe deposition and a magnetically disordered film is produced
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer
Synchrotron based X-ray absorption spectroscopy was utilized to probe the chemistry and structure of polymers in interfacial regions, including the interfacial regions, including the interfacial composition of filled epoxy composites, and the surface
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer
Synchrotron based X-ray absorption spectroscopy was utilized to probe the chemistry and structure of polymers in interfacial regions, including the interfacial composition of filled epoxy composites, and the surface orientation of polymer films. Polymer
Matthew Beekman, James A. Kaduk, Qingzhen Huang, Winnie Wong-Ng, Zhi Yang, Dongli Wang, George S. Nolas
During an attempt to synthesize NaGe136 (a Type-II clathrate) using a vacuum decomposition technique, a novel Na-Ge phase was obtained instead. The framework of this new phase was determined using the combined results of synchrotron, neutron, and
Y S. Lin, R Puthenkovilakam, J P. Chang, C P. Bouldin, Igor Levin, Nhan Van Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO 2/ Si and ZrO 2/SiO 2/Si were investigated and the interfacial layer of as-deposited ZrO 2 on silicon is likely to be ZrSi xO y. The ZrO 2/ZrSi xO y/Si is
Single crystals of a new form of L-Ta2O5 with a 19 x b superstructure have been synthesised by flux growth. The phase has C-centred monoclinic symmetry with a = 6.199(1) , b = 69.55(1) (= 19 x 3.66 ), c = 3.880 (1) . The structure was refined in space
M A. Sahiner, D F. Downey, S W. Novak, Joseph Woicik, D A. Arena
Characterization of the inactive clusters formed by high dose implantation silicon is one of the crucial topics in the semiconductor industry. Analytical techniques, which could provide quantitative information on the detailed description of the complexes
The powerful methods we have for solving the atomic structure of bulk crystals fail for nanostructured materials and there are currently no broadly applicable, quantitative and robust methods to replace them. The solution of this nanostructure problem is
M A. Sahiner, C W. Magee, D F. Downey, Joseph Woicik
Cluster formation in high dose B, BF2 implanted Si wafers is an important problem in silicon doping, since it is one of the leading causes of the electrical deactivation of the dopant. In this study, we used Ge pre-amorphized, ultra low energy B and BF2
We demonstrate that a deforming metal is a self organizing critical system, and that the stress-strain law can be expressed as an integration of certain derivatives of internal variables along the critical line of the system.