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Youn S. Kang, Lawrence H. Robins, Anthony Birdwell, Alexander J. Shapiro, W. R. Thurber, Mark D. Vaudin, M M. Fahmi, D Bryson, S N. Mohammad
The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown bynitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance PR spectroscopy at temperatures between 20 and 300 K. The films were approximately 0.5
W N. Sharpe, O Jadaan, G M. Beheim, George D. Quinn, N N. Nemeth
Micro silicon carbide tension specimen were prepared with straight, curved, and notched gage lengths. These were tested to failure and the strengths analyzed by Weibull statistics. Fractographic analysis confirmed that strength limiting flaws were etch
A study is made of radial crack evolution in curved brittle layers on compliant support substrates. Three-dimensional boundary element analysis (BEA) is used to compute the stepwise growth of radial cracks that initiate at the bottom surfaces of glass on