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Progress on Accurate Metrology of Pitch, Height, Roughness, and Width Artifacts Using an Atomic Force Microscope



J Schneir, T Mcwaid, Ronald G. Dixson, V W. Tsai, John S. Villarrubia, Edwin R. Williams, E Fu


NIST personnel visited 23 IC manufacturing companies and equipment suppliers during 1994 to determine semiconductor industry needs for scanned probe metrology. NIST has initiated projects addressing some of the needs identified. When complete, these projects will enable improved metrology using the scanned probe microscope. Industry needs include pitch, height, angle, and width calibration artifacts, an understanding of the effects of humidity on AFM measurements, and tip metrology techniques. To meet these needs we have designed and build a Calibrated Atomic Force Microscope (C-AFM) with interferometric position control. This AFM is capable of making accurate measurements. We present the operational characteristics of the instrument, accurate X, Y, and Z pitch measurements on a commercially available artifact, measurements on a prototype surface roughness artifact, and a promising technique by which to make accurate linewidth measurements.
Proceedings Title
Proceedings of SPIE
Conference Dates
February 20, 1994
Conference Location
Santa Clara, CA, USA
Conference Title
Integrated Circuit Metrology, Inspection, and Process Control IX, Marylyn H. Bennett, Editor May 1995, Force Metrology


AFM, angle, atomic force microscopy, C-AFM, calibration, CD, critical dimension, dimensional metrology, height, humidity, interferometric position control, linewidth, mathematical morphology, pitch, tip metrology


Schneir, J. , Mcwaid, T. , Dixson, R. , Tsai, V. , Villarrubia, J. , Williams, E. and Fu, E. (1995), Progress on Accurate Metrology of Pitch, Height, Roughness, and Width Artifacts Using an Atomic Force Microscope, Proceedings of SPIE, Santa Clara, CA, USA (Accessed July 20, 2024)


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Created April 30, 1995, Updated October 12, 2021