We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and conduction band offests by 1.20 +- 0.1 and 0.33 +- 0.05eV, respectively.
Citation: Applied Physics Letters
Pub Type: Journals
band gap, band offset, hafnium silicate, hafnium-silicon oxynitride, high-K dielectric, soft x-ray photoemission, x-ray absorption spectroscopy