Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex three- dimensional nanostructures in silicon

Published

Author(s)

Konrad Rykaczewski, Owen J. Hildreth, Ching P. Wong, Andrei G. Fedorov, John H. Scott

Abstract

A process allowing for control over the 3D motion of catalyst nanostructures during Metal-assisted Chemical Etching by their local pinning prior to etching is developed. Topologically complex 3D structures that are partially located within the etched silicon and partially located above the silicon surface can be fabricated repeatedly with high degree of control over the rotation direction and the etch rate.
Citation
Advanced Materials
Volume
23

Keywords

3D fabrication, FIB, MaCE, Metal-assisted Chemical Etching

Citation

Rykaczewski, K. , Hildreth, O. , Wong, C. , Fedorov, A. and Scott, J. (2011), Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex three- dimensional nanostructures in silicon, Advanced Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=906590 (Accessed December 7, 2021)
Created February 1, 2011, Updated February 19, 2017