Rykaczewski, K.
, Hildreth, O.
, Wong, C.
, Fedorov, A.
and Scott, J.
(2011),
Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex three- dimensional nanostructures in silicon, Advanced Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=906590
(Accessed January 17, 2025)
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Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex three- dimensional nanostructures in silicon
Published
Author(s)
, Owen J. Hildreth, Ching P. Wong, Andrei G. Fedorov,
Abstract
A process allowing for control over the 3D motion of catalyst nanostructures during Metal-assisted Chemical Etching by their local pinning prior to etching is developed. Topologically complex 3D structures that are partially located within the etched silicon and partially located above the silicon surface can be fabricated repeatedly with high degree of control over the rotation direction and the etch rate.Citation
Advanced Materials
Volume
23
Pub Type
Journals
Download Paper
Keywords
3D fabrication, FIB, MaCE, Metal-assisted Chemical Etching
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created February 1, 2011, Updated February 19, 2017