Randa, J.
(2016),
Detailed Study of Uncertainties in On-Wafer Transistor Noise-Parameter Measurements, Technical Note (NIST TN), National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NIST.TN.1939
(Accessed April 19, 2024)
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Detailed Study of Uncertainties in On-Wafer Transistor Noise-Parameter Measurements
Published
Author(s)
Abstract
This paper uses a Monte Carlo simulation program to explore various aspects of uncertainties associated with the measurement of the noise parameters of transistors on wafers. The dependence of the noise-parameter uncertainties on the different input uncertainties is investigated in detail. Other issues that are considered include the effect of probe losses, the importance (or not) of including input terminations with reflection coefficients as near as possible to the edge of the Smith chart, improvements due to inclusion of an input termination with noise temperature well below ambient, and the effect of including a reverse measurement. We also briefly consider the case of well-matched amplifiers on wafers.Citation
Technical Note (NIST TN) - 1939
Report Number
1939
NIST Pub Series
Pub Type
NIST Pubs
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Keywords
noise parameters, on-wafer measurement, simulation, transistor, uncertainty analysis
Citation
Created October 24, 2016, Updated January 27, 2020