We have applied chemical force microscopy (CFM) to probe the chemical segregation of resist materials. CFM is capable of providing simultaneous information about surface topography and chemical heterogeneity of partiallt developed resist films. We have used CFM to study ESCAP based resists that are used in 248 nm and extreme ultraviolet (EUV) lithography. We observe changes in both the material roughness and chemical heterogeneity of the resist with the introduction of PAG and with exposure and post exposure bake (PEB). We conclude that chemical segregation in the resist can influence the innate material roughness.
Proceedings Title: SPIE Proceedings | Advanced Lithography | 2007 | SPIE
Conference Dates: February 25-27, 2007
Conference Title: SPIE Proceedings
Pub Type: Conferences
AFM, chemical force microscopy, line edge roughness, PAG, photoresist