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Journals

P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy

Author(s)
David S. Simons, P Chi, S L. Rommel, T E. Dillon, K D. Hobart, P E. Thompson, P R. Berger
Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been...
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