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https://www.nist.gov/people/pradeep-namboodiri
Pradeep Namboodiri (Fed)
Dr. Namboodiri is a guest researcher in the Atom Scale Device Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST).
We synthesized and studied color centers on silicon-on-insulator wafers with photoluminescence mapping and spectroscopy, and fabricated silicon W- and G- color
Pradeep Namboodiri, Mark-yves Gaunin, Alessandro Restelli, Ranjit Kashid, Xiqiao Wang, Fan Fei, Brian Courts, FNU Utsav, Vijith Kamalon Pulikodan, Jonathan Wyrick, Richard M. Silver
Coherent manipulation of electron spins is one of the central problems of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or
Neil M. Zimmerman, Antonio Levy, Pradeep Namboodiri, Joshua M. Pomeroy, Xiqiao Wang, Joseph Fox, Richard M. Silver
P+ monolayers in Si are of great scientific and technological interest, both intrinsically as a material in the "ideal vacuum" of crystalline Si, and because
Pradeep Namboodiri, Jonathan Wyrick, Gheorghe Stan, Xiqiao Wang, Fan Fei, Ranjit Kashid, Scott Schmucker, Richard Kasica, Bryan Barnes, Michael Stewart, Richard M. Silver
Fabrication of quantum devices by atomic scale patterning with a Scanning Tunneling Microscope (STM) has led to the development of single/few atom transistors