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Nikolai Klimov

Nikolai Klimov is a CNST/UMD Postdoctoral Researcher working jointly in the Electron Physics Group in the CNST and the Fundamental Electrical Metrology Group in the EEEL. He received B.S. and M.S. degrees in Physics and Applied Mathematics (summa cum laude) from the Moscow Institute of Physics and Technology, and a Ph.D. in Experimental Condensed Matter Physics from Rutgers University. Nikolai's doctoral research focused on experimental investigations of quantum interference effects in the conductivity of high-mobility Si MOSFETs at ultra-low temperatures. At NIST, Nikolai is developing methods to fabricate and characterize novel, high-quality graphene electronic devices, and investigating possibilities for a new graphene-based quantum resistance standard.

Selected Publications

  • Interaction Effects in the Conductivity of a Two-valley Electron System in High-mobility Si Inversion Layer, N.N. Klimov, D.A. Knyazev, O.E. Omel'yanovskii, V.M. Pudalov, H. Kojima, and M.E. Gershenson, Physical Review B 78, 195308 (2008).
  • Intervalley Scattering and Weak Localization in Si-based Two-dimensional Structures, Yu.A. Kuntsevich, N.N. Klimov, S.A. Tarasenko, N.S. Averkiev, V.M. Pudalov, H. Kojima, and M.E. Gershenson, Physical Review B 75, 195330 (2007).
  • Quenched Disorder Effects in Electron Transport in Si Inversion Layers in the Dilute Regime, V.M. Pudalov, M.E. Gershenson, N.N. Klimov, and H. Kojima, Letters to Journal of Experimental and Theoretical Physics 82, 371-376 (2005).



Fabrication and Testing of Photonic Thermometers

Nikolai N. Klimov, Zeeshan Ahmed
In recent years, a push for developing novel silicon photonic devices for telecommunications has generated a vast knowledge base that is now being leveraged for

Challenges to miniaturizing cold atom technology for deployable vacuum metrology

Stephen P. Eckel, Daniel S. Barker, James A. Fedchak, Nikolai N. Klimov, Eric B. Norrgard, Julia K. Scherschligt, Constantinos Makrides, Eite Tiesinga
Cold atoms are excellent metrological tools; they currently realize SI time and, soon, SI pressure in the ultra-high (UHV) and extreme high vacuum (XHV) regimes

Assessing Radiation Hardness of Silicon Photonic Sensors.

Zeeshan Ahmed, Lonnie T. Cumberland, Ronald E. Tosh, Nikolai N. Klimov, Ileana M. Pazos, Ryan P. Fitzgerald
In recent years silicon photonic platforms have undergone rapid maturation enabling not only optical communication but complex scientific experiments ranging

Recent Developments in Surface Science and Engineering, Thin Films, Nanoscience, Biomaterials, Plasma Science, and Vacuum Technology

Miran Mozetic, Alenka Vesel, Gregor Primc, J. Bauer, A. Eder, G. H. S. Schmid, David Ruzic, Zeeshan Ahmed, Daniel S. Barker, Kevin O. Douglass, Stephen P. Eckel, James A. Fedchak, Jay H. Hendricks, Nikolai N. Klimov, Jacob E. Ricker, Julia K. Scherschligt, Jack A. Stone Jr., Gregory F. Strouse, I. Capan, M Buljan, S. Milosevic, C Teichert, S R. Cohen, A G. Silva, M Lehocky, P Humpolicek, C Rodriguez, J Hernandez-Montelongo, E Punzon-Quijorna, D Mercier, M Manso-Silvan, G Ceccone, A Galtayries, K Stana-Kleinschek, I Petrov, J E. Greene, J Avila, C Y. Chen, B Caja, H Yi, A Boury, S Lorcy, M C. Asensio, T Gans, D O?Connell, F Reniers, A Vincze, M Anderle
Nanometer-sized structures, surfaces and sub-surface phenomena have played an enormous role in science and technological applications and represent a driving
Created October 9, 2019