Brian Hoskins

Electron Physics Group
brian.hoskins@nist.gov
(301) 975-8244

Education

B.S. Materials Science and Engineering – Carnegie Mellon University
M.S. Materials Science and Engineering – Carnegie Mellon University
Ph.D. Materials – University of California, Santa Barbara

Brian Hoskins is an CNST Postdoctoral Researcher in the Electron Physics Group. He received both a B.S. and an M.S. in Materials Science and Engineering from Carnegie Mellon University and a Ph.D. in Materials from the University of California, Santa Barbara. For his doctoral research, he developed and characterized resistive switching devices for use in neuromorphic networks. Brian is working with Jabez McClelland on CMOS integration of resistive switches for the development and characterization of intermediate scale neuromorphic networks.

Selected Publications

 

  • G. C. Adam, B. D. Hoskins, M. Prezioso, D.B. Strukov,Optimized stateful material implication logic for three-dimensional data manipulation, Nano Research 9, 3914 (2016). [doi]
  • M. Prezioso*, F. Merrikh-Bayat*, B.D. Hoskins *, G.C. Adam, K.K. Likharev, and D.B. Strukov, Training and operation of an integrated neuromorphic network based on metal-oxide memristors, Nature 521, 7550 (2015). [doi] *Equal Contributor
  • E. Mikheev, B.D Hoskins, D. B. Strukov, and S. Stemmer, Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions, Nature Communications 5, 3990 (2014). [doi]
Created April 13, 2017