Babak Nikoobakht received his PhD from Georgia Tech in 2002 and joined NIST at September of that year. His research interests include nanowire growth, their novel properties and potential applications. Of special interest are: 1) methods of anisotropic growth of nanocrystals and heterostructures on single crystal substrates that their registries can be controlled and accessed on a scalable fashion; 2) Exploring relation between nanocrystal structure and their function; 3) scalable nanowire integration and their use in applications such as light emitting diodes and photovoltaics.
He developed a widely used method for one-dimensional growth of gold nanocrystals accelerating their use in different areas of R&D including cancer therapy and diagnosis. He also invented the lateral growth of semiconductor nanocrystals for scalable and deterministic positioning of nanocrystals. His work on one-dimensional nanocrystals has been highly cited with more than 7000 citations since year 2000.
Controlling properties of materials at nanoscale is challenging, but highly rewarding as it allows creating materials or devices with unprecedented properties and architectures. In this regard, our research focuses on discovering novel ways nanocrystals can be interfaced together, and understanding how their non-idealities such as interfacial lattice forces or chemical reactions can be harnessed. Some of our current areas of interest include ways nanocrystals and nanochannels with sub-lithographic dimensions can be grown and assembled with predictable properties and order with potential for use in advanced manufacturing. Research themes include:
An ultimate goal is to establish an understanding on how to control and predict basic properties of materials at surface and interface such as composition, structure, dimensions, etc. Progress in any of these directions is expected to impact development of new device concepts in applications such as light emitting devices, photodetectors, solar cells, sensors, and microscale optical spectrophotometers.