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Scalable Synthesis and Device Integration of Self-Registered One-Dimensional Zinc Oxide Nanostructures and Related Materials

Published

Author(s)

Babak Nikoobakht, Xudong Wang, Andrew A. Herzing, Jian Shib

Abstract

On integrating one-dimensional (1D) nanocrystals (nanowires) to useful devices, in this review article, we provide a background on growth processes and how they impact device integration strategies. Successful integration of nanowires to devices and their scalability simply rely on where and how nanowires are formed, how they are interfaced to other device components and how they function. In this direction, we will provide a discussion on developed growth strategies for lateral and standing growth of semiconductor nanostructures and assess their success in addressing current challenges of nanotechnology such as mass integration of nanowires, and the necessary accuracy in their positioning and alignment. In this regard, we highlight some of our recent work on formation of two-dimensional (2D)- and three-dimensional (3D)- nanowire and nanowall arrays and provide an overview of their structural and electro-optical properties. This will be followed by discussing potential applications of such hierarchical assemblies in light generation, photocatalysis and conversion of motion to electricity.
Citation
Chemical Society Reviews

Keywords

one-dimensional nanocrystals, nanowires, Wide-Bandgap Semiconductor, hierarchical assemblies, photocatalysis, nanogenerator, light emitting diodes, Nanodevice Integration, Material Design

Citation

Nikoobakht, B. , Wang, X. , Herzing, A. and Shib, J. (2013), Scalable Synthesis and Device Integration of Self-Registered One-Dimensional Zinc Oxide Nanostructures and Related Materials, Chemical Society Reviews (Accessed October 16, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created September 28, 2013, Updated February 19, 2017