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Ari Feldman (Fed)

High-Speed Measurements Group Leader

Ari D. Feldman received his B.S. in Engineering Physics in 2006 and Ph.D. in Materials Science in 2012 from the Colorado school of Mines, Golden, CO, USA. His doctoral thesis involved the study of anomalous photoconductive decay measurements in silicon under high-optical-injection conditions. Continuing his research on photodetectors, in 2012 he joined the Sensors and Detectors Group as a post-doctoral researcher at the National Institute of Standards and Technology, Boulder, CO. In the Fall of 2013, he was awarded the National Research Council Post-Doctoral Fellowship and joined the High-Speed Measurements Group to develop high-speed photodetectors. As a staff researcher he has contributed to a variety of projects including the Gold Award winning LTE Impacts on GPS and Terahertz Synthesizer IMS. As of the spring of 2019, he is the Acting Group Leader for the High-Speed Measurements Group.


High-Gain 500-GHz InP HBT Power Amplifiers

Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower
Created March 27, 2019, Updated June 15, 2021