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Alline F. Myers (Fed)

Alline Myers is a Physical Scientist in the NanoFab Operations Group. She received a B.S. in Physics from North Carolina State University, an M.S. in Physics from Penn State, and a Ph.D. in Materials Science and Engineering from North Carolina State University. Alline has extensive experience using transmission electron microscopy (TEM), focused ion beam systems, and scanning electron microscopy to characterize nanoscale materials and devices. After working at NIST as an NRC Postdoctoral Research Associate in the Chemical Science and Technology Laboratory, Alline spent over 10 years in the semiconductor industry, working at Advanced Micro Devices and Spansion, where she applied analytical electron microscopy techniques to the characterization and failure analysis of logic and flash memory devices. Alline joined the CNST in 2010 and is responsible for training NanoFab users on the Titan analytical TEM and on TEM sample preparation equipment, as well as for maintaining this equipment. She also provides TEM service work for NanoFab customers and assists users on the FIB/SEM systems.


Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the
Created October 9, 2019, Updated December 8, 2022