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Albert Davydov (Fed)

Albert Davydov is a leader of Functional Nanostructured Materials Group. The group of 12 staff scientists and 7 guest researchers develops measurement methods, models, data, standards, and science for the electrical, chemical, and magnetic properties of nanostructured inorganic materials, including metals and semiconductors, as related to their microstructure and processing. Three active projects in the group are focusing on materials and processes for  advanced electronics, magnetics, energy and catalysis: 1) Electrochemical Processes (POC: Tom Moffat), 2) Metrology of Magnetic Materials (POC: Cindi Dennis), and 3) Low-dimensional Materials and Magnetic Thin Films for Advanced Microelectronics (POC: Albert Davydov). 

Research Opportunities with the Group: National Research Council Postdoctoral Fellowship (open to U.S. citizens) - please contact above POCs if you're interested in applying.


Short Bio: Albert Davydov started his career as an Assistant Professor at the Department of Chemistry at MSU (1989-1993), then as a Research Scientist at the University of Florida (1993-1997), followed by NIST Research Associate position with the University of Maryland (1997-2005). He joined NIST as a staff scientist in 2005. He has extensive experience and publication record (~150 publications in peer-reviewed journals, 5 patents) related to fabrication, processing and microstructural characterization of a wide range of electronic materials including semiconductors, 2D and quantum materials. His expertise also includes thermodynamic modeling and experimental study of phase diagrams for metal and semiconductor material systems.

He serves as a Head of the Semiconductor Task Group for the International Centre for Diffraction Data (ICDD), member of Advisory Board with the Applied Physics Review journal, member of the Science Advisory Board with the nanoelectronics COmputing REsearch (nCORE) program at SRC, co-Chair of the Reference Materials Task Group at ASTM Subcommittee on Compound Semiconductors, member of Technical Committee 229 (Nanotehcnology) at International Organization for Standardization, and co-Chair of SPIE Optics & Photonics Conference on Low-dimensional Materials and Devices.

He has been mentoring and co-advising for M.Sc. and Ph.D. students from the DC metropolitan area universities and for NRC postdocs at NIST.

Research interests:
1) Bulk crystal and thin film growth of compound semiconductors, 2D and quantum materials, including transition metal dichalcogenides, Group IIIA-VA chalcogenides

2) Fabrication, processing and characterization of semiconductor nanowires: Si, GaN, SiC, ZnO

3) Thermodynamic assessment of phase diagrams for metal/semiconductor systems: Ga-N, Co-Mo etc.


2012  Invention of the Year on “Nanoengineered Chemical Sensors for Environmental Pollutants” Award by University of Maryland to the NIST and Univ. of Maryland team

2006 “25 Most Innovative Products (GaN Nanowire Nanolights)”  Award by R&D Magazine and Micro/Nano Newsletter (to NIST team)

2003  Award of International Centre for Diffraction Data (ICDD) for contribution to the "Next generation of powder diffraction file"

2001  Best Paper Award on ‘Phase Diagram Assessment’ from APDIC


Strain-activated stimulated emission from multilayer MoSe2 in a narrow operation window

Yuankun Lin, Noah Hurley, Steve Kamau, Evan Hathaway, Yan Jiang, Roberto Gonzalez Rodriguez, Sinto Varghese, Sergiy Krylyuk, Albert Davydov, Yuanxi Wang, Anupama Kaul, Jingbiao Cui
Herein, photoluminescence (PL) and fluorescence lifetime imaging (FLIM) in multilayer MoSe2 are studied. Strain-activated stimulated emission via defect levels

Patents (2018-Present)

Device Having a Array of Sensors on a Single Chip

NIST Inventors
Albert Davydov and Vladimir Oleshko
Nanowire-nanocluster hybrid chemical sensors were realized by functionalizing gallium nitride (GaN) nanowires (NWs) with titanium dioxide (TiO2) nanoclusters for selectively sensing benzene and other related aromatic compounds. Hybrid sensor devices were developed by fabrication two-terminal devices

Phase Transition Based Resistive Random-Access Memory

NIST Inventors
Albert Davydov , Sergiy Krylyuk and Huairuo Zhang
A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device
Line drawing of the method for manufacturing an array of sensors on a single chip

Method for Manufacturing an Array of Sensors on a Single Chip

NIST Inventors
Albert Davydov and Vladimir Oleshko
A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light
Created March 29, 2019, Updated December 8, 2022