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Albert Davydov

Albert Davydov is a leader of Functional Nanostructured Materials Group. The group of 12 staff scientists and 7 guest researchers develops measurement methods, models, data, standards, and science for the electrical, chemical, and magnetic properties of nanostructured inorganic materials, including metals and semiconductors, as related to their microstructure and processing. Three active projects in the group are focusing on materials and processes for  advanced electronics, magnetics, energy and catalysis: 1) Electrochemical Processes (POC: Tom Moffat), 2) Metrology of Magnetic Materials (POC: Cindi Dennis), and 3) Low-dimensional Materials for Advanced Electronics, Photonics & Sensors (POC: Albert Davydov). 

Research Opportunities with the Group: National Research Council Postdoctoral Fellowship (open to U.S. citizens) - please contact above POCs if you're interested in applying.

 

Short Bio: Albert Davydov started his career as an Assistant Professor at the Department of Chemistry at MSU (1989-1993), then as a Research Scientist at the University of Florida (1993-1997), followed by NIST Research Associate position with the University of Maryland (1997-2005). He joined NIST as a staff scientist in 2005. He has extensive experience and publication record (~150 publications in peer-reviewed journals, 5 patents) related to fabrication, processing and microstructural characterization of a wide range of electronic materials including 2D and quantum materials. His expertise also includes thermodynamic modeling and experimental study of phase diagrams for metal and semiconductor material systems.

He serves as a Head of the Semiconductor Task Group for the International Centre for Diffraction Data (ICDD), member of Advisory Board with the Applied Physics Review journal, member of the Science Advisory Board with the nanoelectronics COmputing REsearch (nCORE) program at SRC, co-Chair of the Reference Materials Task Group at ASTM Subcommittee on Compound Semiconductors, and co-Chair of SPIE Optics & Photonics Conference on Low-dimensional Materials and Devices.

He has been mentoring and co-advising for M.Sc. and Ph.D. students from the DC metropolitan area universities and for NRC postdocs at NIST.

Research interests:
1) Bulk crystal and thin film growth of 2D and quantum materials: MoTe2 and related transition metal dichalcogenides; Bi2Se3, InSe etc.

2) Fabrication, processing and characterization of semiconductor nanowires: Si, GaN, SiC, ZnO

3) Thermodynamic assessment of phase diagrams for metal/semiconductor systems: Ga-N, Co-Mo etc.

Awards

2012  Invention of the Year on “Nanoengineered Chemical Sensors for Environmental Pollutants” Award by University of Maryland to the NIST and Univ. of Maryland team

2006 “25 Most Innovative Products (GaN Nanowire Nanolights)”  Award by R&D Magazine and Micro/Nano Newsletter (to NIST team)

2003  Award of International Centre for Diffraction Data (ICDD) for contribution to the "Next generation of powder diffraction file"

2001  Best Paper Award on ‘Phase Diagram Assessment’ from APDIC

Publications

Photocurrent detection of the orbital angular momentum of light

Author(s)
Zhurun Ji, Wenjing Liu, Sergiy Krylyuk, Xiaopeng Fan, Zhifeng Zhang, Anlian Pan, Liang Feng, Albert Davydov, Ritesh Agarwal
Utilizing the orbital angular momentum (OAM) of light is promising for increasing the bandwidth of optical communication networks. However, direct photocurrent

Comparable Enhancement of TERS signals from WeSe2 on Chromium and Gold.

Author(s)
Albert Davydov, Sergiy Krylyuk, Angela R. Hight Walker, Bojan R. Ilic, Andrey Krayev, Ashish Bhattarai, Alan G. Joly, Matej Velicky, Patrick Z. El-Khoury
Plasmonic tip-sample junctions, at which the incident and scattered optical fields are localized and optimally enhanced, are often exploited to achieve

Doping of MoTe2 via surface charge-transfer in ambient air

Author(s)
Gheorghe Stan, Cristian Ciobanu, Sri Ranga Jai Likith, Asha Rani, Sergiy Krylyuk, Albert Davydov
Doping is a key process that facilitates the use of semiconductors for electronic and optoelectronic devices, by which the concentration and type of majority

Valley Phenomena in the Candidate Phase Change Material WSe2(1-x)Te2x

Author(s)
Sean M. Oliver, Joshua Young, Sergiy Krylyuk, Thomas L. Reinecke, Albert Davydov, Patrick M. Vora
Alloyed transition metals dichalcogenides (TMDs) provide the unique opportunity for coupling band engineering and valleytronic phenomena in an atomically-thin
Created March 29, 2019, Updated March 12, 2020