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Albert Davydov

Albert Davydov received the Ph.D. in Chemistry from Moscow State University (Russia) in 1989. He was an Assistant Professor of Chemistry at Moscow State University (1987-1993), an Assistant Research Scientist at the University of Florida (1993-1997), and a NIST Research Associate at the University of Maryland (1997-2005). He joined NIST fulltime in 2005 and is now active in wide bandgap nanowires.

He has more than 20 years experience with materials analysis, bulk crystal growth, thin film growth/deposition, and the fabrication, characterization, and processing of a wide range of nanostructured electronic and optical materials. He serves as the Head of the Semiconductor Task Group for the International Centre for Diffraction Data and is on the Editorial Board of the Journal of Mining and Metallurgy. Dr. Davydov has published/coauthored over 50 publications in peer-reviewed journals.

Research interests:
1) Fabrication, processing and characterization of semiconductor nanowires and thin films: GaN, SiC, ZnO, Si
2) Development of electrical contacts to semiconductor nanowires and thin films
3) Thermodynamic assessment of phase diagrams for metal/semiconductor systems

Honors/Awards:
1. "One of the 25 Most Innovative Products (GaN Nanowire Nanolights)"
Award by R&D Magazine and Micro/Nano Newsletter (to NIST team) (2006)
2. Award of International Centre for Diffraction Data (ICDD) (2003)
3. Best Paper Award on 'Phase Diagram Assessment' from APDIC (2001)

Publications

Dielectric properties of Nb_{x}W_{1-x}Se_{2} alloys

Author(s)
Albert F. Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela R. Hight Walker, Albert Davydov, David B. Newell
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties

An Ultra-fast Multi-level MoTe2-based RRAM

Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to

Predicting synthesizability

Author(s)
Albert Davydov, Ursula R. Kattner
Advancements in multiscale multi-physics computational materials design have led to accelerated discovery of advanced materials for energy, electronics and

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi
Created March 29, 2019