Albert Davydov received the Ph.D. in Chemistry from Moscow State University (Russia) in 1989. He was an Assistant Professor of Chemistry at Moscow State University (1987-1993), an Assistant Research Scientist at the University of Florida (1993-1997), and a NIST Research Associate at the University of Maryland (1997-2005). He joined NIST fulltime in 2005 and is now active in wide bandgap nanowires.
He has more than 20 years experience with materials analysis, bulk crystal growth, thin film growth/deposition, and the fabrication, characterization, and processing of a wide range of nanostructured electronic and optical materials. He serves as the Head of the Semiconductor Task Group for the International Centre for Diffraction Data and is on the Editorial Board of the Journal of Mining and Metallurgy. Dr. Davydov has published/coauthored over 50 publications in peer-reviewed journals.
1) Fabrication, processing and characterization of semiconductor nanowires and thin films: GaN, SiC, ZnO, Si
2) Development of electrical contacts to semiconductor nanowires and thin films
3) Thermodynamic assessment of phase diagrams for metal/semiconductor systems
1. "One of the 25 Most Innovative Products (GaN Nanowire Nanolights)"
Award by R&D Magazine and Micro/Nano Newsletter (to NIST team) (2006)
2. Award of International Centre for Diffraction Data (ICDD) (2003)
3. Best Paper Award on 'Phase Diagram Assessment' from APDIC (2001)