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Search Patents by Albert Davydov

Displaying 1 - 2 of 2

Phase Transition Based Resistive Random-Access Memory

NIST Inventors
Feng Zhang, Albert Davydov, Sergiy Krylyuk, Huairuo Zhang and
Patent Description This invention relates to memory devices, in particular to resistive random-access memory (RRAM) cells. RRAM-based technology has gained attention of the semiconductor industry due to its potential scalability, high operation speed, high endurance and ease of process flow. RRAM
Line drawing of the method for manufacturing an array of sensors on a single chip

Method for Manufacturing an Array of Sensors on a Single Chip

NIST Inventors
Albert Davydov, Vladimir Oleshko and
Patent Description Detection of chemical species in air, such as industrial pollutants, poisonous gases, chemical fumes, and volatile organic compounds (VOCs), is vital for the health and safety of communities around the world. The development of reliable, portable gas sensors that can detect