Determination of Pore-Size Distributions in Low-Κ Dielectric Films by Transmission Electron Microscopy

Published

September 1, 2003

Author(s)

B J. Foran, B Kastenmeier, David S. Bright

Abstract

This paper discusses methods of characterizing pore size distributions in low-k films by transmission electron microscopy (TEM), comparing both conventional TEM and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Methods of sample preparation were tailored to protect pore structure during cross-sectional thinning allowing techniques similar to conventional mechanical polishing and low-angle ion milling. Knowledge of TEM sample thickness allows quantification of pore density distributions. TEM sample thickness and quantitative image analysis methods are discussed.

Proceedings Title

Characterization and Metrology for ULSI Technology | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP

Volume

683

Conference Dates

March 24-28, 2003

Conference Location

Austin, TX, US

Conference Title

AIP Conference Proceedings

Pub Type

Conferences

Keywords

dielectric films, HAADF-STEM, image processing, pore size distribution porous low-k, scanning transmission electron microscop, transmission electron microscopy

Citation

Foran, B. , Kastenmeier, B. and Bright, D. (2003), Determination of Pore-Size Distributions in Low-Κ Dielectric Films by Transmission Electron Microscopy, Characterization and Metrology for ULSI Technology | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP, Austin, TX, US (Accessed October 7, 2025)